|
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 717-850 MHz, 112 W Avg., 50 V
- A5G07H800W19NR3
- NXP Semiconductors
-
1:
¥2,378.9099
-
90库存量
-
寿命结束
|
Mouser 零件编号
771-A5G07H800W19NR3
寿命结束
|
NXP Semiconductors
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 717-850 MHz, 112 W Avg., 50 V
|
|
90库存量
|
|
|
¥2,378.9099
|
|
|
¥2,018.1913
|
|
|
¥1,918.7626
|
|
|
¥1,872.6925
|
|
|
查看
|
|
|
¥1,808.1695
|
|
|
¥1,822.8143
|
|
|
¥1,808.1695
|
|
|
报价
|
|
最低： 1
倍数： 1
:
250
|
|
|
SMD/SMT
|
OM-780-4S4S-8
|
125 V
|
- 55 C
|
+ 150 C
|
|
|
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V
- A5G21H605W19NR3
- NXP Semiconductors
-
1:
¥2,138.0391
-
158库存量
-
寿命结束
|
Mouser 零件编号
771-A5G21H605W19NR3
寿命结束
|
NXP Semiconductors
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V
|
|
158库存量
|
|
|
¥2,138.0391
|
|
|
¥1,813.7969
|
|
|
¥1,724.5495
|
|
|
¥1,683.1011
|
|
|
查看
|
|
|
¥1,625.1999
|
|
|
¥1,661.439
|
|
|
¥1,625.1999
|
|
|
报价
|
|
最低： 1
倍数： 1
:
250
|
|
|
SMD/SMT
|
OM-780-4S4S-8
|
125 V
|
- 55 C
|
+ 150 C
|
|
|
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 1930 1995 MHz, 85 W Avg., 48 V
- A5G19H605W19NR3
- NXP Semiconductors
-
1:
¥2,137.056
-
45库存量
-
寿命结束
|
Mouser 零件编号
771-A5G19H605W19NR3
寿命结束
|
NXP Semiconductors
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 1930 1995 MHz, 85 W Avg., 48 V
|
|
45库存量
|
|
|
¥2,137.056
|
|
|
¥1,812.8816
|
|
|
¥1,723.6342
|
|
|
¥1,682.2762
|
|
|
查看
|
|
|
¥1,624.2959
|
|
|
¥1,637.4491
|
|
|
¥1,624.2959
|
|
|
报价
|
|
最低： 1
倍数： 1
:
250
|
|
|
|
|
|
|
|
|
|
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V
- A5G08H800W19NR3
- NXP Semiconductors
-
1:
¥2,497.9554
-
25库存量
-
寿命结束
|
Mouser 零件编号
771-A5G08H800W19NR3
寿命结束
|
NXP Semiconductors
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V
|
|
25库存量
|
|
|
¥2,497.9554
|
|
|
¥2,119.1003
|
|
|
¥2,014.7787
|
|
|
¥1,966.3243
|
|
|
查看
|
|
|
¥1,898.6712
|
|
|
¥1,913.9601
|
|
|
¥1,898.6712
|
|
|
报价
|
|
最低： 1
倍数： 1
:
250
|
|
|
SMD/SMT
|
OM-780-4S4S-8
|
125 V
|
- 55 C
|
+ 150 C
|
|
|
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 1805-1880 MHz, 85 W Avg., 48 V
- A5G18H610W19NR3
- NXP Semiconductors
-
1:
¥2,182.0526
-
48库存量
-
寿命结束
|
Mouser 零件编号
771-A5G18H610W19NR3
寿命结束
|
NXP Semiconductors
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 1805-1880 MHz, 85 W Avg., 48 V
|
|
48库存量
|
|
|
¥2,182.0526
|
|
|
¥1,851.0982
|
|
|
¥1,759.9524
|
|
|
¥1,717.6791
|
|
|
¥1,706.6842
|
|
|
¥1,706.6842
|
|
最低： 1
倍数： 1
:
250
|
|
|
SMD/SMT
|
OM-780-4S4S-8
|
125 V
|
- 55 C
|
+ 150 C
|
|
|
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V
- A5G26H605W19NR3
- NXP Semiconductors
-
1:
¥2,244.4173
-
22库存量
-
寿命结束
|
Mouser 零件编号
771-A5G26H605W19NR3
寿命结束
|
NXP Semiconductors
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V
|
|
22库存量
|
|
|
¥2,244.4173
|
|
|
¥1,904.0387
|
|
|
¥1,810.3278
|
|
|
¥1,766.8115
|
|
|
查看
|
|
|
¥1,706.0175
|
|
|
¥1,719.747
|
|
|
¥1,706.0175
|
|
|
报价
|
|
最低： 1
倍数： 1
:
250
|
|
|
SMD/SMT
|
OM-780-4S4S-8
|
125 V
|
- 55 C
|
+ 150 C
|
|
