|
|
栅极驱动器 650-V 30-m? GaN FET with integrated driv
- LMG3526R030RQST
- Texas Instruments
-
1:
¥275.2341
-
222库存量
|
Mouser 零件编号
595-LMG3526R030RQST
|
Texas Instruments
|
栅极驱动器 650-V 30-m? GaN FET with integrated driv
|
|
222库存量
|
|
|
¥275.2341
|
|
|
¥242.0573
|
|
|
¥229.3787
|
|
|
¥212.9598
|
|
|
¥201.1513
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
250
|
|
|
|
|
GaN 场效应晶体管 30W, DC - 6GHz
- QPD1035
- Qorvo
-
1:
¥3,044.5929
-
45库存量
-
Mouser 的新产品
|
Mouser 零件编号
772-QPD1035
Mouser 的新产品
|
Qorvo
|
GaN 场效应晶体管 30W, DC - 6GHz
|
|
45库存量
|
|
|
¥3,044.5929
|
|
|
¥2,854.6512
|
|
|
¥2,188.584
|
|
|
¥2,188.584
|
|
最低: 1
倍数: 1
:
50
|
|
|
|
|
交流/直流转换器 115 W (85-264 VAC)
- INN5376F-H904-TL
- Power Integrations
-
1:
¥41.5275
-
1,862库存量
|
Mouser 零件编号
869-INN5376F-H904-TL
|
Power Integrations
|
交流/直流转换器 115 W (85-264 VAC)
|
|
1,862库存量
|
|
|
¥41.5275
|
|
|
¥31.6852
|
|
|
¥29.1992
|
|
|
¥26.9618
|
|
|
¥24.1481
|
|
|
查看
|
|
|
¥25.8883
|
|
|
¥25.8092
|
|
|
¥25.7301
|
|
|
¥24.069
|
|
最低: 1
倍数: 1
:
1,800
|
|
|
|
|
栅极驱动器 100V, 1.6A, 5A, EMI-Optimized Half-Bridge GaN Driver
- MPQ1918GQE-AEC1-P
- Monolithic Power Systems (MPS)
-
1:
¥27.9562
-
4,047库存量
|
Mouser 零件编号
946-MPQ1918GQEAEC1-P
|
Monolithic Power Systems (MPS)
|
栅极驱动器 100V, 1.6A, 5A, EMI-Optimized Half-Bridge GaN Driver
|
|
4,047库存量
|
|
|
¥27.9562
|
|
|
¥21.0067
|
|
|
¥19.2778
|
|
|
¥17.3681
|
|
|
¥15.7974
|
|
|
查看
|
|
|
¥16.4641
|
|
|
¥15.142
|
|
|
¥14.3962
|
|
最低: 1
倍数: 1
:
500
|
|
|
|
|
栅极驱动器 Automotive 7-A/5-A s ingle-channel low-s A 595-LMG1025QDEETQ1
- LMG1025QDEERQ1
- Texas Instruments
-
1:
¥85.0325
-
2,321库存量
|
Mouser 零件编号
595-LMG1025QDEERQ1
|
Texas Instruments
|
栅极驱动器 Automotive 7-A/5-A s ingle-channel low-s A 595-LMG1025QDEETQ1
|
|
2,321库存量
|
|
|
¥85.0325
|
|
|
¥66.3423
|
|
|
¥61.7093
|
|
|
¥56.5791
|
|
|
查看
|
|
|
¥49.4601
|
|
|
¥54.8389
|
|
|
¥53.3473
|
|
|
¥52.0252
|
|
|
¥49.4601
|
|
|
报价
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V
- STDRIVEG210Q
- STMicroelectronics
-
1:
¥22.6678
-
665库存量
-
新产品
|
Mouser 零件编号
511-STDRIVEG210Q
新产品
|
STMicroelectronics
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V
|
|
665库存量
|
|
|
¥22.6678
|
|
|
¥16.9613
|
|
|
¥15.4697
|
|
|
¥13.899
|
|
|
查看
|
|
|
¥13.1532
|
|
|
¥12.5769
|
|
|
¥12.0797
|
|
|
¥11.5825
|
|
|
¥11.4921
|
|
最低: 1
倍数: 1
|
|
|
|
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V
- STDRIVEG211Q
- STMicroelectronics
-
1:
¥22.6678
-
664库存量
-
新产品
|
Mouser 零件编号
511-STDRIVEG211Q
新产品
|
STMicroelectronics
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V
|
|
664库存量
|
|
|
¥22.6678
|
|
|
¥16.9613
|
|
|
¥15.4697
|
|
|
¥13.899
|
|
|
查看
|
|
|
¥13.1532
|
|
|
¥12.5769
|
|
|
¥12.0797
|
|
|
¥11.5825
|
|
|
¥11.4921
|
|
最低: 1
倍数: 1
|
|
|
|
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches
- STDRIVEG611Q
- STMicroelectronics
-
1:
¥25.6397
-
172库存量
-
新产品
|
Mouser 零件编号
511-STDRIVEG611Q
新产品
|
STMicroelectronics
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches
|
|
172库存量
|
|
|
¥25.6397
|
|
|
¥19.2778
|
|
|
¥17.6167
|
|
|
¥15.8765
|
|
|
查看
|
|
|
¥14.4753
|
|
|
¥14.0572
|
|
|
¥13.899
|
|
|
¥13.56
|
|
|
¥13.2323
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 650V, 29A, N-Channel Chip, GaN FET, DFN5X6A Package, 13"
- CDFG6558N TR13 PBFREE
- Central Semiconductor
-
1:
¥94.129
-
2,470库存量
-
新产品
|
Mouser 零件编号
610-CDFG6558NTR13PBF
新产品
|
Central Semiconductor
|
GaN 场效应晶体管 650V, 29A, N-Channel Chip, GaN FET, DFN5X6A Package, 13"
|
|
2,470库存量
|
|
|
¥94.129
|
|
|
¥66.5909
|
|
|
¥52.0252
|
|
|
¥50.1268
|
|
|
¥42.4315
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 MV GAN DISCRETES
- IGB110S101XTMA1
- Infineon Technologies
-
1:
¥19.9332
-
1,864库存量
-
新产品
|
Mouser 零件编号
726-IGB110S101XTMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 MV GAN DISCRETES
|
|
1,864库存量
|
|
|
¥19.9332
|
|
|
¥12.3283
|
|
|
¥8.5993
|
|
|
¥6.9382
|
|
|
¥5.3901
|
|
|
查看
|
|
|
¥6.2602
|
|
|
¥6.1585
|
|
|
¥5.1076
|
|
最低: 1
倍数: 1
:
5,000
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm
- IGB110S10S1XTMA1
- Infineon Technologies
-
1:
¥18.532
-
1,342库存量
-
新产品
|
Mouser 零件编号
726-IGB110S10S1XTMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm
|
|
1,342库存量
|
|
|
¥18.532
|
|
|
¥11.4921
|
|
|
¥8.1925
|
|
|
¥6.8365
|
|
|
¥5.3901
|
|
|
查看
|
|
|
¥6.2602
|
|
|
¥6.1585
|
|
|
¥5.1076
|
|
最低: 1
倍数: 1
:
5,000
|
|
|
|
|
GaN 场效应晶体管 HV GAN DISCRETES
- IGLT65R055D2ATMA1
- Infineon Technologies
-
1:
¥59.2233
-
195库存量
-
1,800预期 2026/7/30
-
新产品
|
Mouser 零件编号
726-IGLT65R055D2ATMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 HV GAN DISCRETES
|
|
195库存量
1,800预期 2026/7/30
|
|
|
¥59.2233
|
|
|
¥39.8664
|
|
|
¥30.9394
|
|
|
¥28.2048
|
|
|
¥23.8995
|
|
|
¥23.8995
|
|
最低: 1
倍数: 1
:
1,800
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGT65R055D2ATMA1
- Infineon Technologies
-
1:
¥59.2233
-
149库存量
-
2,000预期 2026/8/13
-
新产品
|
Mouser 零件编号
726-IGT65R055D2ATMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
149库存量
2,000预期 2026/8/13
|
|
|
¥59.2233
|
|
|
¥39.8664
|
|
|
¥28.9506
|
|
|
¥26.4646
|
|
|
¥23.9899
|
|
|
¥23.165
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
GaN 场效应晶体管 GAN111-650WSB/SOT429 /TO-247
- GAN111-650WSBQ
- Nexperia
-
1:
¥99.3383
-
96库存量
-
新产品
|
Mouser 零件编号
771-GAN111-650WSBQ
新产品
|
Nexperia
|
GaN 场效应晶体管 GAN111-650WSB/SOT429 /TO-247
|
|
96库存量
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 GANB012-040CBA/SOT8088/WLCSP12
- GANB012-040CBAZ
- Nexperia
-
1:
¥8.5993
-
2,249库存量
-
新产品
|
Mouser 零件编号
771-GANB012-040CBAZ
新产品
|
Nexperia
|
GaN 场效应晶体管 GANB012-040CBA/SOT8088/WLCSP12
|
|
2,249库存量
|
|
|
¥8.5993
|
|
|
¥5.5822
|
|
|
¥5.537
|
|
|
¥5.2997
|
|
|
¥4.2488
|
|
|
查看
|
|
|
¥4.8929
|
|
|
¥3.8307
|
|
|
¥3.616
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 GANB1R2-040QBA/SOT8092/VQFN16
- GANB1R2-040QBAZ
- Nexperia
-
1:
¥71.9584
-
2,132库存量
-
新产品
|
Mouser 零件编号
771-GANB1R2-040QBAZ
新产品
|
Nexperia
|
GaN 场效应晶体管 GANB1R2-040QBA/SOT8092/VQFN16
|
|
2,132库存量
|
|
|
¥71.9584
|
|
|
¥48.9629
|
|
|
¥35.9792
|
|
|
¥35.482
|
|
|
¥32.5101
|
|
|
¥28.9506
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 GANE1R8-100QBA/SOT8091/VQFN7
- GANE1R8-100QBAZ
- Nexperia
-
1:
¥87.9253
-
2,482库存量
-
新产品
|
Mouser 零件编号
771-GANE1R8-100QBAZ
新产品
|
Nexperia
|
GaN 场效应晶体管 GANE1R8-100QBA/SOT8091/VQFN7
|
|
2,482库存量
|
|
|
¥87.9253
|
|
|
¥60.5454
|
|
|
¥46.2396
|
|
|
¥42.3524
|
|
|
¥37.7194
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 GANE240-700BBA/SOT428/DPAK
- GANE240-700BBAZ
- Nexperia
-
1:
¥29.1201
-
2,488库存量
-
新产品
|
Mouser 零件编号
771-GANE240-700BBAZ
新产品
|
Nexperia
|
GaN 场效应晶体管 GANE240-700BBA/SOT428/DPAK
|
|
2,488库存量
|
|
|
¥29.1201
|
|
|
¥18.9388
|
|
|
¥13.56
|
|
|
¥11.3339
|
|
|
¥9.0174
|
|
|
查看
|
|
|
¥10.7576
|
|
|
¥8.5202
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 GANE2R7-100CBA/SOT8089/WLCSP22
- GANE2R7-100CBAZ
- Nexperia
-
1:
¥48.3866
-
1,473库存量
-
新产品
|
Mouser 零件编号
771-GANE2R7-100CBAZ
新产品
|
Nexperia
|
GaN 场效应晶体管 GANE2R7-100CBA/SOT8089/WLCSP22
|
|
1,473库存量
|
|
|
¥48.3866
|
|
|
¥32.2615
|
|
|
¥23.165
|
|
|
¥20.9276
|
|
|
¥17.3681
|
|
|
¥17.0404
|
|
最低: 1
倍数: 1
:
1,500
|
|
|
|
|
GaN 场效应晶体管 GANE7R0-100CBA/SOT8090/WLCSP6
- GANE7R0-100CBAZ
- Nexperia
-
1:
¥22.4192
-
1,015库存量
-
新产品
|
Mouser 零件编号
771-GANE7R0-100CBAZ
新产品
|
Nexperia
|
GaN 场效应晶体管 GANE7R0-100CBA/SOT8090/WLCSP6
|
|
1,015库存量
|
|
|
¥22.4192
|
|
|
¥14.4753
|
|
|
¥9.9214
|
|
|
¥7.9213
|
|
|
¥6.4975
|
|
|
查看
|
|
|
¥6.9721
|
|
|
¥6.0003
|
|
最低: 1
倍数: 1
:
1,500
|
|
|
|
|
GaN 场效应晶体管 650V, 50mohm GaN FET in TO247-4L
- TP65H050G4YS
- Renesas Electronics
-
1:
¥86.4337
-
560库存量
|
Mouser 零件编号
227-TP65H050G4YS
|
Renesas Electronics
|
GaN 场效应晶体管 650V, 50mohm GaN FET in TO247-4L
|
|
560库存量
|
|
|
¥86.4337
|
|
|
¥51.1212
|
|
|
¥43.3468
|
|
|
¥37.6403
|
|
|
查看
|
|
|
¥36.9736
|
|
|
¥36.8945
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 650V, 70mohm GaN FET in 8x8 PQFN
- TP65H070G4LSG-TR
- Renesas Electronics
-
1:
¥70.3877
-
2,662库存量
|
Mouser 零件编号
227-TP65H070G4LSG-TR
|
Renesas Electronics
|
GaN 场效应晶体管 650V, 70mohm GaN FET in 8x8 PQFN
|
|
2,662库存量
|
|
|
¥70.3877
|
|
|
¥47.8894
|
|
|
¥35.1543
|
|
|
¥34.4876
|
|
|
¥31.5948
|
|
|
¥28.1257
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 650V, 70mohm GaN FET in 8x8 PQFN
- TP65H070G4LSGB-TR
- Renesas Electronics
-
1:
¥69.156
-
2,446库存量
|
Mouser 零件编号
227-TP65H070G4LSGBTR
|
Renesas Electronics
|
GaN 场效应晶体管 650V, 70mohm GaN FET in 8x8 PQFN
|
|
2,446库存量
|
|
|
¥69.156
|
|
|
¥46.9854
|
|
|
¥34.4876
|
|
|
¥33.6627
|
|
|
¥30.849
|
|
|
¥27.459
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 650V, 70mohm GaN FET in TO220
- TP65H070G4PS
- Renesas Electronics
-
1:
¥69.6419
-
959库存量
|
Mouser 零件编号
227-TP65H070G4PS
|
Renesas Electronics
|
GaN 场效应晶体管 650V, 70mohm GaN FET in TO220
|
|
959库存量
|
|
|
¥69.6419
|
|
|
¥37.7985
|
|
|
¥34.6571
|
|
|
¥29.2783
|
|
|
¥27.7076
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
|
|
GaN 场效应晶体管 650V, 70mohm GaN FET in TOLT
- TP65H070G4RS-TR
- Renesas Electronics
-
1:
¥70.5572
-
1,669库存量
|
Mouser 零件编号
227-TP65H070G4RS-TR
|
Renesas Electronics
|
GaN 场效应晶体管 650V, 70mohm GaN FET in TOLT
|
|
1,669库存量
|
|
|
¥70.5572
|
|
|
¥47.9798
|
|
|
¥35.2334
|
|
|
¥34.578
|
|
|
¥28.2839
|
|
|
¥28.2048
|
|
最低: 1
倍数: 1
:
1,300
|
|
|