IM1G16D2DDBG-25

Intelligent Memory
822-IM1G16D2DDBG-25
IM1G16D2DDBG-25

制造商:

说明:
动态随机存取存储器 DDR2 1Gb, 1.8V, 64Mx16, 400MHz (800Mbps), 0C to +95C, FBGA-84

ECAD模型:
下载免费库加载程序,将此文件转换,以供您的ECAD工具使用。了解详情。

产品属性 属性值 选择属性
Intelligent Memory
产品种类: 动态随机存取存储器
RoHS:  
SDRAM - DDR2
1 Gbit
16 bit
400 MHz
FBGA-84
64 M x 16
400 ps
1.7 V
1.9 V
0 C
+ 95 C
IM1G16D2
Tray
商标: Intelligent Memory
湿度敏感性: Yes
安装风格: SMD/SMT
产品类型: DRAM
工厂包装数量: 209
子类别: Memory & Data Storage
电源电流—最大值: 75 mA
单位重量: 192 mg
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已选择的属性: 0

合规代码
CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320032
MXHTS:
8542320299
ECCN:
EAR99
原产地分类
原产国:
中国台湾
组装原产国/地区:
不可用
扩散国家:
不可用
发货时,国家/地区可能会发生变化。

Dynamic Random Access Memory (DRAM)

Intelligent Memory Dynamic Random Access Memory (DRAM) includes a full range of JEDEC-compliant DRAMs and ECC DRAMs (SDRAM, DDR, DDR2, DDR3, DDR4, LPDDR4). From an application's point of view, these components work like a monolithic device. The DRAM devices allow for maximum levels of memory density without altering existing board layouts or designs.

Double Data Rate 2 (DDR2) SDRAM

Intelligent Memory Double Data Rate (DDR2) Synchronous DRAM (SDRAM) are eight-bank devices that achieve high-speed data transfer rates. Interleaving the eight memory banks allows random access operations faster than standard DRAMs. A chip architecture prefetches multiple bits and then synchronizes the output data to a system clock. All control, address, and circuits are synchronized with the positive edge of an externally supplied clock. In a source-synchronous manner, I/Os are synchronized with a pair of bidirectional strobes. A sequential, gapless data rate is possible depending on the device's burst length, CAS latency, and speed grade.

供货情况

库存:
无库存
生产周期:
8 周 预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥91.1571 ¥91.16
¥84.7048 ¥847.05
¥82.0493 ¥2,051.23
¥80.0718 ¥4,003.59
¥76.0942 ¥7,609.42
¥74.1167 ¥15,490.39
¥72.9528 ¥30,494.27
¥71.6307 ¥74,854.08