DSLP0120T023G6RP

交流-直流电源

Littelfuse交流/直流电源是电子设计中常用的构建模块。这些电源构建块中的元件需要可靠、持久，Littelfuse提供符合这些要求的各种产品。该元件组合包括过流和过压保护、功率级和输出保护。Littelfuse AC/DC电源产品的典型应用领域包括汽车、太阳能、工业、制造业等。

DSLP-T023G6RP SIDACtor保护型晶闸管

Littelfuse DSLP-T023G6RP宽带优化SIDACtor保护型晶闸管可为高带宽应用提供过压保护，对数据信号的影响极小。DSLP-T023G6RP元件采用获得专利的EpiSCR硅撬棒技术、业界流行的成本竞争型SOT23-6封装以及直通式引线框架设计。创新型硅设计具有电容负载特性，适用于HD-SDI、HD-CVBS、ADSL、ADSL2、ADSL2+、VDSL2、Vplus (35b) 和G.fast等应用。该系列中有各种V_DRM选项可选。与传统的钳位硅技术相比，该技术可提供更佳的浪涌能力，这样既可减少由交流电源故障和多次瞬态浪涌或雷电引起的现场故障，又不会影响信号完整性，在较高数据速率信号下这种优势尤为突出。这些元件不含铅，符合RoHS指令。

宽带优化SIDACtor保护型晶闸管

Littelfuse宽带优化SIDACtor保护型晶闸管致力于解决宽带设备的性能和监管要求。宽带优化系列通过其各种解决方案为应用提供满足DSL设备（高达VDSL）和以太网（高达1000baseT）的独特保护需求所需的选项。采用专有技术和获得专利的方法实现优化，最大限度地降低设备电容对宽带信号的不良影响。这些宽带元件提供过电压保护解决方案，有助于应用符合Telcordia GR-1089第4版，以及ITU-T建议K.20、K.21、K.44和K.45。

SIDACtor® Protection Thyristors

Littelfuse SIDACtor® Protection Thyristors are thyristor devices used to protect sensitive circuits from electrical disturbances caused by lightning-induced surges, inductive-coupled spikes, and AC power fault conditions. The unique structure and characteristics of the thyristor are used to create an overvoltage protection device with precise and repeatable turn-on characteristics with low voltage overshoot and high surge current capabilities. SIDACtor components are solid state crowbar devices with a patented ion implant technology that ensures effective protection within nanoseconds. Littelfuse SIDACtor Protection Thyristors include a wide range of semiconductor protection thyristor over-voltage transient suppression devices designed to serve requirements of telecom and data networking equipment applications.

Littelfuse DSLP SIDACtor® Protection Thyristors

Littelfuse DSLP Biased Series SOT23-6 SIDACtor® Protection Thyristors provide overvoltage protection for applications such as HD-SDI, HD-CVBS, VDSL2, ADSL2, ADSL2+, and G.fast with minimal effect on data signals. This unique silicon design offers a capacitive loading characteristic that is compatible with these high bandwidth applications. The devices utilize the patented EpiSCR silicon crowbar technology and SOT23-6 package with flow-through lead frame design. Various V_DRM options are available in this series. This technolgy produces a better surge capability than traditional clamping silicon technology. This reduces the possibility of field failures caused by AC power fault and multiple transient surges or lightning without compromising the signal integrity particularly at a high data rate.
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