SSM6N55NU,LF

Toshiba
757-SSM6N55NULF
SSM6N55NU,LF

制造商:

说明:
MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD

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产品属性 属性值 选择属性
Toshiba
产品种类: MOSFET
RoHS:  
Si
N-Channel
2 Channel
U-MOSVII-H
Reel
Cut Tape
MouseReel
商标: Toshiba
配置: Dual
产品类型: MOSFETs
系列: SSM6N55
工厂包装数量: 3000
子类别: Transistors
晶体管类型: 2 N-Channel
单位重量: 8.500 mg
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已选择的属性: 0

合规代码
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541219000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
原产地分类
原产国:
泰国
组装原产国/地区:
不可用
扩散国家:
不可用
发货时,国家/地区可能会发生变化。

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.

库存量: 8,938

库存:
8,938 可立即发货
生产周期:
16 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:
封装:
整卷卷轴(请按3000的倍数订购)

定价 (含13% 增值税)

数量 单价
总价
剪切带/MouseReel™ †
¥5.537 ¥5.54
¥2.486 ¥24.86
¥2.1809 ¥218.09
¥1.6159 ¥807.95
¥1.3786 ¥1,378.60
整卷卷轴(请按3000的倍数订购)
¥1.1639 ¥3,491.70
¥1.0509 ¥6,305.40
¥0.98423 ¥8,858.07
† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。 ↩