中国
TPN11003NL,LQ
图像仅供参考
请参阅产品规格
请参阅产品规格
757-TPN11003NLLQ
TPN11003NL,LQ
制造商：
说明：
MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V
MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V
数据表
Application Notes
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors Maximum Ratings
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Surface Mount Small Signal Transistor (BJT) Precautions for use
Models
Product Catalogs
Test/Quality Data
合规代码
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
原产地分类
- 原产国:
- 中国
- 组装原产国/地区:
- 不可用
- 扩散国家:
- 不可用
