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LTO100F75R00FTE3

Name: Vishay LTO100F75R00FTE3
Brand: Vishay / Sfernice
SKU: 72-LTO100F75R00FTE3
Price: 57.9 RMB
Availability: InStock

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请参阅产品规格

Mouser编号：

72-LTO100F75R00FTE3

制造商编号：

LTO100F75R00FTE3

制造商：

Vishay / Sfernice

说明：

厚膜电阻器 - 透孔 100W 75 Ohms 1% TO-247

数据表:

LTO100F75R00FTE3 数据表 (PDF)

ECAD模型:

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产品属性	属性值	选择属性
制造商:	Vishay
产品种类:	厚膜电阻器 - 透孔
RoHS:
REACH - SVHC:
系列:	LTO 100
电阻:	75 Ohms
功率额定值:	100 W
容差:	1 %
温度系数:	150 PPM / C
最小工作温度:	- 55 C
最大工作温度:	+ 175 C
电压额定值:	375 V
长度:	15.76 mm
端接类型:	Radial
封装:	Tube
高度:	20.7 mm
引线间隔:	10.16 mm
产品:	Thick Film Resistors Leaded
类型:	Power Resistor, Thick Film Technology
宽度:	5 mm
商标:	Vishay / Sfernice
安装风格:	PCB Mount
封装 / 箱体:	TO-247-2
产品类型:	Thick Film Resistors
工厂包装数量:	30
子类别:	Resistors
技术:	Thick Film
单位重量:	3.500 g

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已选择的属性: 0

筛选文档:

数据表

LTO100F75R00FTE3 数据表 (PDF)

PCN

Product Change Notification 2024-04-15 (PDF)

REACH Certificate (PDF)

合规代码

CNHTS:: 8533290000
CAHTS:: 8533290000
USHTS:: 8533290000
JPHTS:: 853329000
KRHTS:: 8533299000
TARIC:: 8533290000
MXHTS:: 8533299900
BRHTS:: 85332900
ECCN:: EAR99

原产地分类

原产国:: 捷克共和国
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

LTO Power Resistors

Vishay / Sfernice LTO Power Resistors combine high power capability with strong thermal efficiency for demanding power electronics. Based on thick-film technology, these resistors offer excellent heat conduction, allowing for direct mounting on a heatsink and supporting continuous power ratings of 30W, 50W, 100W, and 150W. The surge performance is optimized for dynamic loads, with pulse absorption ranging from 20J/0.1s to 75J/0.1s, depending on the model. Precision laser trimming ensures stable and accurate performance across a wide resistance range from 0.01Ω to 1.3MΩ. The TO-220 and TO-247 packages are easily integrated into compact, high-power assemblies. The entire Vishay / Sfernice LTO lineup is AEC-Q200 qualified, guaranteeing automotive-grade robustness and long-term reliability. Typical applications include motor drives, snubbers and braking circuits, power conversion, and battery and energy storage.