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AT25PE80-MHN-Y

Name: Renesas Electronics AT25PE80-MHN-Y
Brand: Renesas / Dialog
SKU: 988-AT25PE80-MHN-Y
Price: 19.03 RMB
Availability: InStock

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Mouser编号：

988-AT25PE80-MHN-Y

制造商编号：

AT25PE80-MHN-Y

制造商：

Renesas / Dialog

说明：

NOR闪存 8 Mbit, Wide Vcc (1.7V to 3.6V), -40C to 85C, DFN 5x6 (Tray), Single SPI DataFlash (Micron M25PE Replacement)

数据表:

AT25PE80-MHN-Y 数据表

ECAD模型:

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产品属性	属性值	选择属性
制造商:	Renesas Electronics
产品种类:	NOR闪存
RoHS:
安装风格:	SMD/SMT
封装 / 箱体:	UDFN-8
系列:	AT25PE80
存储容量:	8 Mbit
电源电压-最小:	1.7 V
电源电压-最大:	3.6 V
有源读取电流（最大值）:	16 mA
接口类型:	SPI
最大时钟频率:	85 MHz
组织:	1 M x 8
数据总线宽度:	8 bit
最小工作温度:	- 40 C
最大工作温度:	+ 85 C
封装:	Tray
商标:	Renesas / Dialog
产品类型:	NOR Flash
速度:	85 MHz
工厂包装数量:	570
子类别:	Memory & Data Storage

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数据表

AT25PE80-MHN-Y 数据表

RoHS Certificate (PDF)

合规代码

CNHTS:: 8542329090
CAHTS:: 8542320040
USHTS:: 8542320051
MXHTS:: 8542320299
ECCN:: EAR99

原产地分类

原产国:: 中国台湾
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

AT25PE80 Series Serial Flash Memory

Renesas / Dialog AT25PE80 Series 8-Mbit DataFlash-L Page Erase Serial Flash Memory is a 1.7V minimum, serial-interface sequential access flash memory. This AT25PE80 Series memory device features 8,650,752 bits of memory organized as 4,096 pages of 256 bytes or 264 bytes each. The AT25PE80 series operates from a single 1.7V to 3.6V power supply for the erase, program, and read operations. The AT25PE80 series flash memory contains two SRAM buffers of 256 or 264 bytes each in addition to the main memory. These SRAM buffers can be used as additional system scratchpad memory. The AT25PE80 series is ideally suited for a wide variety of digital voice, image, program code, and data storage applications.

25PE Dataflash-L Serial Flash Memory

Renesas / Dialog 25PE Dataflash-L Serial Flash Memories are low pin count, wide voltage range, ultra-low power, and page erase sequential access memories. These Adesto Technologies memory chips enable energy-efficient, lower-cost systems through advanced command-rich interface and granular architecture. The 25PE Dataflash-L memories reduce CPU/MCU overheads, reduce the power signature, and extend battery life. These flash memories support RapidS^™ serial interface for applications requiring a high-speed operation. The 25PE flash memories use simple sequential access to simplify hardware layout, increase system reliability, minimize switching noise, and reduce package size. These memory chips are enabled through the Chip Select (CS) pin and are accessed via a 3-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).

DataFlash™ SPI Memory

Renesas / Dialog DataFlash™ SPI Memory devices are feature-rich, page-erase (as small as 256 bytes) SPI-compatible Serial Flash with advanced protection and security features. These devices provide developers with the most flexible, easy-to-use Serial Flash solution on the market to address virtually any application. Dual-I/O and Quad-I/O interface options provide the ability to double and quadruple read throughputs. The DataFlash SPI Memory devices provide system developers with an extremely flexible solution by utilizing a page-erase architecture to allow the smallest amount of data (as little as 256 bytes) to be erased compared to any other Flash solution.