AT25PE80-MHN-Y

Renesas / Dialog
988-AT25PE80-MHN-Y
AT25PE80-MHN-Y

制造商：

说明：
NOR闪存 8 Mbit, Wide Vcc (1.7V to 3.6V), -40C to 85C, DFN 5x6 (Tray), Single SPI DataFlash (Micron M25PE Replacement)

数据表:
ECAD模型:
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库存量: 1,512

库存：
1,512 可立即发货
生产周期：
12 周 大于所示数量的预计工厂生产时间。
数量大于1512的订购须受最低订购要求的限制。
最少： 1   倍数： 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥17.1195 ¥17.12
¥15.6279 ¥156.28
¥15.2211 ¥380.53
¥14.8934 ¥744.67
¥14.5544 ¥1,455.44
¥14.3962 ¥3,599.05
¥13.4018 ¥7,639.03
¥12.2379 ¥13,951.21

产品属性 属性值 选择属性
Renesas Electronics
产品种类: NOR闪存
RoHS:  
SMD/SMT
UDFN-8
AT25PE80
8 Mbit
1.7 V
3.6 V
16 mA
SPI
85 MHz
1 M x 8
8 bit
- 40 C
+ 85 C
Tray
商标: Renesas / Dialog
产品类型: NOR Flash
速度: 85 MHz
工厂包装数量: 570
子类别: Memory & Data Storage
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已选择的属性: 0

数据表

CNHTS:
8542329090
CAHTS:
8542320040
USHTS:
8542320051
TARIC:
8542326100
MXHTS:
8542320299
ECCN:
EAR99

AT25PE80 Series Serial Flash Memory

Renesas / Dialog AT25PE80 Series 8-Mbit DataFlash-L Page Erase Serial Flash Memory is a 1.7V minimum, serial-interface sequential access flash memory. This AT25PE80 Series memory device features 8,650,752 bits of memory organized as 4,096 pages of 256 bytes or 264 bytes each. The AT25PE80 series operates from a single 1.7V to 3.6V power supply for the erase, program, and read operations. The AT25PE80 series flash memory contains two SRAM buffers of 256 or 264 bytes each in addition to the main memory. These SRAM buffers can be used as additional system scratchpad memory. The AT25PE80 series is ideally suited for a wide variety of digital voice, image, program code, and data storage applications.

25PE Dataflash-L Serial Flash Memory

Renesas / Dialog 25PE Dataflash-L Serial Flash Memories are low pin count, wide voltage range, ultra-low power, and page erase sequential access memories. These Adesto Technologies memory chips enable energy-efficient, lower-cost systems through advanced command-rich interface and granular architecture. The 25PE Dataflash-L memories reduce CPU/MCU overheads, reduce the power signature, and extend battery life. These flash memories support RapidS™ serial interface for applications requiring a high-speed operation. The 25PE flash memories use simple sequential access to simplify hardware layout, increase system reliability, minimize switching noise, and reduce package size. These memory chips are enabled through the Chip Select (CS) pin and are accessed via a 3-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).

DataFlash™ SPI Memory

Renesas / Dialog DataFlash™ SPI Memory devices are feature-rich, page-erase (as small as 256 bytes) SPI-compatible Serial Flash with advanced protection and security features. These devices provide developers with the most flexible, easy-to-use Serial Flash solution on the market to address virtually any application. Dual-I/O and Quad-I/O interface options provide the ability to double and quadruple read throughputs. The DataFlash SPI Memory devices provide system developers with an extremely flexible solution by utilizing a page-erase architecture to allow the smallest amount of data (as little as 256 bytes) to be erased compared to any other Flash solution.

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