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FM28V020-SG

Name: Infineon FM28V020-SG
Brand: Infineon Technologies
SKU: 877-FM28V020-SG
Price: 124.36 RMB
Availability: InStock

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请参阅产品规格

Mouser编号：

877-FM28V020-SG

制造商编号：

FM28V020-SG

制造商：

Infineon Technologies

说明：

F-RAM 256K (32Kx8) 60ns F-RAM

数据表:

FM28V020-SG 数据表 (PDF)

ECAD模型:

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产品属性	属性值	选择属性
制造商:	Infineon
产品种类:	F-RAM
RoHS:
存储容量:	256 kbit
接口类型:	Parallel
组织:	32 k x 8
封装 / 箱体:	SOIC-28
访问时间:	60 ns
电源电压-最小:	2 V
电源电压-最大:	3.6 V
最小工作温度:	- 40 C
最大工作温度:	+ 85 C
系列:	FM28V020-SG
封装:	Tube
商标:	Infineon Technologies
湿度敏感性:	Yes
安装风格:	SMD/SMT
工作电源电压:	3.3 V
产品类型:	FRAM
工厂包装数量:	540
子类别:	Memory & Data Storage
单位重量:	2.215 g

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已选择的属性: 0

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数据表

FM28V020-SG 数据表 (PDF)

Statement Regarding the RoHS Compliance of Cypress Products

合规代码

CNHTS:: 8542329090
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320905
KRHTS:: 8542321040
TARIC:: 8542329000
MXHTS:: 8542320299
ECCN:: EAR99

原产地分类

原产国:: 美国
组装原产国/地区:: 泰国
扩散国家:: 美国

发货时，国家/地区可能会发生变化。

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.

Parallel F-RAM Non-Volatile Memory

Infineon Technologies Parallel F-RAM Non-Volatile Memory operates similarly to other RAM devices and can be used as a drop-in replacement for a standard SRAM in a system. These F-RAMs read and write similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. These features make these devices ideal for non-volatile memory applications requiring frequent or rapid writes.