GE12MPS06E-TR

Name: Navitas Semiconductor GE12MPS06E-TR
Brand: GeneSiC Semiconductor
SKU: 905-GE12MPS06E-TR
Price: 30.05 RMB
Availability: InStock

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Mouser编号：

905-GE12MPS06E-TR

制造商编号：

GE12MPS06E-TR

制造商：

GeneSiC Semiconductor

说明：

碳化硅肖特基二极管 650V 12A TO-252-2 SiC Schottky MPS

数据表:

GE12MPS06E-TR 数据表 (PDF)

ECAD模型:

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产品属性	属性值	选择属性
制造商:	Navitas Semiconductor
产品种类:	碳化硅肖特基二极管
RoHS:
安装风格:	SMD/SMT
封装 / 箱体:	TO-252-2
配置:	Single
If - 正向电流:	12 A
Vrrm - 重复反向电压:	650 V
Vr - 反向电压 :	650 V
系列:	SiC Schottky MPS
封装:	Reel
封装:	Cut Tape
商标:	GeneSiC Semiconductor
产品类型:	SiC Schottky Diodes
工厂包装数量:	2500
子类别:	Diodes & Rectifiers

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数据表

GE12MPS06E-TR 数据表 (PDF)

合规代码

CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

原产地分类

原产国:: 美国
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

650V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V SiC Schottky MPS™ Diodes combine excellent forward and switching characteristics with best-in-class surge current robustness and thermal conductivity. These diodes operate at 175°C maximum operating temperature and show temperature-independent switching behavior. The 650V SiC Schottky diodes feature superior Avalanche (UIS) capability and low device capacitance. One key advantage of these diodes is the ease of paralleling devices without thermal runaway. Typical applications include SMPS, EVs, motor drives, LED and HID lighting, medical imaging systems, high voltage sensing, induction heating and welding, and pulsed power.

650V, 1200V, & 1700V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V, 1200V, and 1700V SiC Schottky MPS™ Diodes provide low standby power losses and improved circuit efficiency. The 650V SiC Diodes have a forward current range of 6A to 20A. The 1200V SiC Diodes have a forward current range of 1A to 200A. The 1700V SiC Diodes have a forward current range of 5A to 50A.

特色产品

NAVITAS SEMICONDUCTOR

650V SiC Schottky MPS™ Diodes

Combine excellent forward and switching characteristics with best-in-class thermal conductivity.

了解更多的信息

3300V 5A SiC Schottky MPS Diode

A new generation of SiC diode with improved surge and avalanche robustness.

了解更多的信息

650V SiC Schottky MPS™ Diodes

Combines excellent forward and switching characteristics with robustness and thermal conductivity.

了解更多的信息

650V, 1200V, & 1700V SiC Schottky MPS™ Diodes

Provides low standby power losses and improved circuit efficiency.

了解更多的信息

查看来自Navitas Semiconductor的所有新品速递

数量	单价	总价
	¥33.9565	¥33.96
	¥27.1878	¥271.88
	¥25.3572	¥633.93
	¥23.278	¥2,327.80
	¥22.3175	¥5,579.38
	¥22.2384	¥11,119.20
整卷卷轴（请按2500的倍数订购）
	¥20.6677	¥51,669.25
	¥19.7976	¥98,988.00

GE12MPS06E-TR

制造商：

GeneSiC Semiconductor

说明：

碳化硅肖特基二极管 650V 12A TO-252-2 SiC Schottky MPS

数据表

650V SiC Schottky MPS™ Diodes

650V, 1200V, & 1700V SiC Schottky MPS™ Diodes

特色产品

NAVITAS SEMICONDUCTOR

库存量: 2,490

定价 (含13% 增值税)

GE12MPS06E-TR

制造商： GeneSiC Semiconductor

说明： 碳化硅肖特基二极管 650V 12A TO-252-2 SiC Schottky MPS

规格

文件 (1)

数据表

产品与贸易合规

更多信息

650V SiC Schottky MPS™ Diodes

650V, 1200V, & 1700V SiC Schottky MPS™ Diodes

特色产品 NAVITAS SEMICONDUCTOR

库存量: 2,490

定价 (含13% 增值税)

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制造商：

GeneSiC Semiconductor

说明：

碳化硅肖特基二极管 650V 12A TO-252-2 SiC Schottky MPS

特色产品

NAVITAS SEMICONDUCTOR