MR0A08BMA35

Everspin Technologies
936-MR0A08BMA35
MR0A08BMA35

制造商：

说明：
磁阻随机存取存储器 (MRAM) 1Mb 3.3V 128Kx8 35ns Parallel 磁阻随机存取存储器 (MRAM)

数据表:
ECAD模型:
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供货情况

库存：
无库存
生产周期：
27 周 预计工厂生产时间。
本产品所报告的交付时间长。
最少： 696   倍数： 348
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥120.2659 ¥83,705.07

产品属性 属性值 选择属性
Everspin Technologies
产品种类: 磁阻随机存取存储器 (MRAM)
RoHS:  
BGA-48
Parallel
1 Mbit
128 k x 8
8 bit
35 ns
3 V
3.6 V
25 mA, 55 mA
0 C
+ 70 C
MR0A08B
Tray
商标: Everspin Technologies
湿度敏感性: Yes
安装风格: SMD/SMT
Pd-功率耗散: 600 mW
产品类型: MRAM
工厂包装数量: 348
子类别: Memory & Data Storage
商标名: Parallel I/O (x8)
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已选择的属性: 0

数据表

PCN

此功能要求启用JavaScript。

CNHTS:
8542329000
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320312
KRHTS:
8542321040
MXHTS:
8471600499
ECCN:
EAR99

MR0A08B, MR0D08B, & MR0A16A 1Mb Parallel MRAM

Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance. 

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.

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