MR0A08BYS35

Name: Everspin Technologies MR0A08BYS35
Brand: Everspin Technologies
SKU: 936-MR0A08BYS35
Price: 164.48 RMB
Availability: InStock

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Mouser编号：

936-MR0A08BYS35

制造商编号：

MR0A08BYS35

制造商：

Everspin Technologies

说明：

磁阻随机存取存储器 (MRAM) 1Mb 3.3V 128Kx8 35ns Parallel 磁阻随机存取存储器 (MRAM)

数据表:

MR0A08BYS35 数据表 (PDF)

ECAD模型:

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产品属性	属性值	选择属性
制造商:	Everspin Technologies
产品种类:	磁阻随机存取存储器 (MRAM)
RoHS:
封装 / 箱体:	TSOP-II-44
接口类型:	Parallel
存储容量:	1 Mbit
组织:	128 k x 8
数据总线宽度:	8 bit
访问时间:	35 ns
电源电压-最小:	3 V
电源电压-最大:	3.6 V
工作电源电流:	25 mA, 55 mA
最小工作温度:	0 C
最大工作温度:	+ 70 C
系列:	MR0A08B
封装:	Tray
商标:	Everspin Technologies
湿度敏感性:	Yes
安装风格:	SMD/SMT
Pd-功率耗散:	600 mW
产品类型:	MRAM
工厂包装数量:	135
子类别:	Memory & Data Storage
商标名:	Parallel I/O (x8)
单位重量:	11.146 g

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筛选文档:

数据表

MR0A08BYS35 数据表 (PDF)

PCN

Alternative Format for Trace Codes (PDF)

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合规代码

CNHTS:: 8542329010
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320312
KRHTS:: 8542321040
MXHTS:: 8542320299
ECCN:: EAR99

原产地分类

原产国:: 中国台湾
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.

MR0A08B, MR0D08B, & MR0A16A 1Mb Parallel MRAM

Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance.