MR20H40CDF

Name: Everspin Technologies MR20H40CDF
Brand: Everspin Technologies
SKU: 936-MR20H40CDF
Price: 252.47 RMB
Availability: OutOfStock

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Mouser编号：

936-MR20H40CDF

制造商编号：

MR20H40CDF

制造商：

Everspin Technologies

说明：

磁阻随机存取存储器 (MRAM) 4Mb 3.3V 50Mhz 512K x 8 SPI

数据表:

MR20H40CDF 数据表 (PDF)

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产品属性	属性值	选择属性
制造商:	Everspin Technologies
产品种类:	磁阻随机存取存储器 (MRAM)
RoHS:
封装 / 箱体:	DFN-8
接口类型:	SPI
存储容量:	4 Mbit
组织:	512 k x 8
数据总线宽度:	8 bit
访问时间:	20 ns
电源电压-最小:	3 V
电源电压-最大:	3.6 V
工作电源电流:	13.8 mA, 33 mA
最小工作温度:	- 40 C
最大工作温度:	+ 85 C
安装风格:	SMD/SMT
系列:	MR20H40
封装:	Tray
商标:	Everspin Technologies
湿度敏感性:	Yes
Pd-功率耗散:	600 mW
产品类型:	MRAM
工厂包装数量:	570
子类别:	Memory & Data Storage
商标名:	Serial I/O (SPI)
单位重量:	37.400 mg

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已选择的属性: 0

筛选文档:

数据表

MR20H40CDF 数据表 (PDF)

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合规代码

CNHTS:: 8542329090
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 854232031
KRHTS:: 8542321040
MXHTS:: 8542320299
ECCN:: EAR99

原产地分类

原产国:: 中国台湾
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.

MR2A08A & MR2A16A 4Mb Parallel MRAM

Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits.