MR25H128ACDF

Everspin Technologies
936-MR25H128ACDF
MR25H128ACDF

制造商:

说明:
磁阻随机存取存储器 (MRAM) 128Kb 3.3V 16Kx8 SPI

ECAD模型:
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库存量: 1,140

库存:
1,140 可立即发货
生产周期:
27 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥46.3187 ¥46.32
¥42.8496 ¥428.50
¥41.6066 ¥1,040.17
¥40.6122 ¥2,030.61
¥39.6178 ¥3,961.78
¥38.3748 ¥9,593.70
¥37.3013 ¥21,261.74
¥36.6459 ¥41,776.33
¥33.8322 ¥96,421.77

产品属性 属性值 选择属性
Everspin Technologies
产品种类: 磁阻随机存取存储器 (MRAM)
RoHS:  
DFN-8
SPI
128 kbit
16 k x 8
8 bit
2.7 V
3.6 V
6 mA, 23 mA
- 40 C
+ 85 C
MR25H128A
Tray
商标: Everspin Technologies
湿度敏感性: Yes
安装风格: SMD/SMT
Pd-功率耗散: 600 mW
产品类型: MRAM
工厂包装数量: 570
子类别: Memory & Data Storage
商标名: Serial I/O (SPI)
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已选择的属性: 0

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CNHTS:
8542329000
CAHTS:
8542320090
USHTS:
8542320071
MXHTS:
8542320299
ECCN:
EAR99

MR25Hxx Serial SPI MRAMs

Everspin Technologies MR25Hxx Serial SPI MRAMs offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. 

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.