MR25H128ACDF

Name: Everspin Technologies MR25H128ACDF
Brand: Everspin Technologies
SKU: 936-MR25H128ACDF
Price: 48.53 RMB
Availability: InStock

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Mouser编号：

936-MR25H128ACDF

制造商编号：

MR25H128ACDF

制造商：

Everspin Technologies

说明：

磁阻随机存取存储器 (MRAM) 128Kb 3.3V 16Kx8 SPI

数据表:

MR25H128ACDF 数据表 (PDF)

ECAD模型:

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产品属性	属性值	选择属性
制造商:	Everspin Technologies
产品种类:	磁阻随机存取存储器 (MRAM)
RoHS:
封装 / 箱体:	DFN-8
接口类型:	SPI
存储容量:	128 kbit
组织:	16 k x 8
数据总线宽度:	8 bit
电源电压-最小:	2.7 V
电源电压-最大:	3.6 V
工作电源电流:	6 mA, 23 mA
最小工作温度:	- 40 C
最大工作温度:	+ 85 C
安装风格:	SMD/SMT
系列:	MR25H128A
封装:	Tray
商标:	Everspin Technologies
湿度敏感性:	Yes
Pd-功率耗散:	600 mW
产品类型:	MRAM
工厂包装数量:	570
子类别:	Memory & Data Storage
商标名:	Serial I/O (SPI)

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数据表

MR25H128ACDF 数据表 (PDF)

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合规代码

CNHTS:: 8542329010
CAHTS:: 8542320090
USHTS:: 8542320071
MXHTS:: 8542320299
ECCN:: EAR99

原产地分类

原产国:: 菲律宾
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

MR25Hxx Serial SPI MRAMs

Everspin Technologies MR25Hxx Serial SPI MRAMs offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.

特色产品

EVERSPIN TECHNOLOGIES

EMxxLX MRAM Memory Devices

High-performance, multiple I/O, and SPI-compatible MRAM devices that feature a 1.65V to 2V voltage.

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EMD4E001G Spin-Transfer Torque MRAM

Features 1Gb non-volatile ST-DDR4 MRAM with a 64Mb x 16 organization.

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MR5A16A 32Mb Toggle MRAM

32Mbit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 16 bits.

了解更多的信息

MR25Hxx Serial SPI MRAMs

MRAM with serial EEPROM and serial Flash compatible read/write timing and no write delays.

了解更多的信息

MR2A08A & MR2A16A 4Mb Parallel MRAM

Offers SRAM compatible 35ns read/write timing with unlimited endurance.

了解更多的信息

数量	单价	总价
	¥54.8389	¥54.84
	¥51.1212	¥511.21
	¥49.5505	¥1,238.76
	¥48.3866	¥2,419.33
	¥47.234	¥4,723.40
	¥45.7424	¥11,435.60
	¥44.4203	¥25,319.57
	¥44.0926	¥50,265.56
2,850	报价

MR25H128ACDF

制造商：

Everspin Technologies

说明：

磁阻随机存取存储器 (MRAM) 128Kb 3.3V 16Kx8 SPI

数据表

MR25Hxx Serial SPI MRAMs

Magnetoresistive Random Access Memory (MRAM)

特色产品

EVERSPIN TECHNOLOGIES

库存量: 1,305

定价 (含13% 增值税)

MR25H128ACDF

制造商： Everspin Technologies

说明： 磁阻随机存取存储器 (MRAM) 128Kb 3.3V 16Kx8 SPI

规格

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数据表

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MR25Hxx Serial SPI MRAMs

Magnetoresistive Random Access Memory (MRAM)

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库存量: 1,305

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制造商：

Everspin Technologies

说明：

磁阻随机存取存储器 (MRAM) 128Kb 3.3V 16Kx8 SPI

特色产品

EVERSPIN TECHNOLOGIES