RN2301,LXHF
图像仅供参考
请参阅产品规格
请参阅产品规格
757-RN2301LXHF
RN2301,LXHF
制造商：
说明：
数字晶体管 AUTO AEC-Q Single PNP , R1=4.7kOhm, R2=4.7kOhm, VCEO=-50V, IC=-0.1A (SOT-323)
数字晶体管 AUTO AEC-Q Single PNP , R1=4.7kOhm, R2=4.7kOhm, VCEO=-50V, IC=-0.1A (SOT-323)
数据表
Application Notes
- Application Note
- Application Note
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Surface Mount Small Signal Transistor (BJT) Precautions for use
Models
Other
Product Catalogs
Test/Quality Data
合规代码
- CAHTS:
- 8541210000
- USHTS:
- 8541210095
- TARIC:
- 8541210000
- MXHTS:
- 8541210100
- ECCN:
- EAR99
原产地分类
- 原产国:
- 泰国
- 组装原产国/地区:
- 不可用
- 扩散国家:
- 不可用
库存量: 5,170
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库存：
-
5,170 可立即发货出现意外错误。请稍候重试。
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生产周期：
-
18 周 大于所示数量的预计工厂生产时间。