TGA2237-SM

Name: Qorvo TGA2237-SM
Brand: Qorvo
SKU: 772-TGA2237-SM
Price: 1204.39 RMB
Availability: InStock

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Mouser编号：

772-TGA2237-SM

制造商编号：

TGA2237-SM

制造商：

Qorvo

说明：

射频放大器 30-2500MHz 10W GaN PAE > 50% Gain 19dB

数据表:

TGA2237-SM 数据表 (PDF)

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产品属性	属性值	选择属性
制造商:	Qorvo
产品种类:	射频放大器
RoHS:
工作频率:	30 MHz to 2.5 GHz
工作电源电压:	32 V
工作电源电流:	360 mA
增益:	19 dB
类型:	Power Amplifiers
安装风格:	SMD/SMT
封装 / 箱体:	QFN-32
技术:	GaN SiC
P1dB - 压缩点:	33 dBm
最小工作温度:	- 40 C
最大工作温度:	+ 85 C
系列:	TGA2237
封装:	Waffle
商标:	Qorvo
开发套件:	TGA2237-SM Eval Board
输入返回损失:	10 dB
湿度敏感性:	Yes
通道数量:	1 Channel
Pd-功率耗散:	19 W
产品类型:	RF Amplifier
工厂包装数量:	25
子类别:	Wireless & RF Integrated Circuits
零件号别名:	TGA2237
单位重量:	188.600 mg

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数据表

TGA2237-SM 数据表 (PDF)

PCN

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合规代码

CNHTS:: 8542339000
CAHTS:: 8542330000
USHTS:: 8542330001
JPHTS:: 8542330996
KRHTS:: 8532331000
MXHTS:: 8542330299
ECCN:: EAR99

原产地分类

原产国:: 美国
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

TGA2237 Wideband Distributed Amplifier

Qorvo TGA2237 Wideband Distributed Amplifier is fabricated on the Qorvo production 0.25um Gallium-Nitride (GaN) on Silicon Carbide (SiC) process. The TGA2237 operates from 0.03GHz to 2.5GHz and provides 10W of saturated output power with 13dB of large signal gain and greater than 50.% power-added efficiency. The broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237 amplifier is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.

GaN Power Amplifiers

Qorvo GaN Power Amplifiers allow unique, cost-effective solutions across a variety of applications. With these high-power amplifiers designed for military, commercial, satellite communications and radar systems, Qorvo offers GaN-based products meeting today's market needs and future requirements.