中国
TPH1R712MD,L1Q
图像仅供参考
请参阅产品规格
请参阅产品规格
757-TPH1R712MDL1Q
TPH1R712MD,L1Q
制造商：
说明：
MOSFET P-Channel Mosfet 20V UMOS-VI
MOSFET P-Channel Mosfet 20V UMOS-VI
数据表
Application Notes
- Glossary of Photocoupler and Photorelay Terms
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Photorelays - Points for Photorelays in High Frequency Circuit Applications
- Photorelays Points for photorelays in high frequency circuit applications 7
- Photorely E-book (Replacement for mechanical relay)
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Safety Standards for Photocouplers
Models
Product Catalogs
Test/Quality Data
合规代码
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
原产地分类
- 原产国:
- 马来西亚
- 组装原产国/地区:
- 马来西亚
- 扩散国家:
- 日本
库存量: 1,024
-
库存：
-
1,024可立即发货出现意外错误。请稍候重试。
-
在途量:
-
20,000预期 2026/10/19
-
生产周期：
-
24周 大于所示数量的预计工厂生产时间。