中国
TPN4R712MD,L1Q
图像仅供参考
请参阅产品规格
请参阅产品规格
757-TPN4R712MDL1Q
TPN4R712MD,L1Q
制造商：
说明：
MOSFET P-Channel Mosfet 20V UMOS-VI
MOSFET P-Channel Mosfet 20V UMOS-VI
数据表
Application Notes
- Basics of CMOS Logic ICs
- C2MOS LOGIC IC Product Guide HC Series
- CMOS Logic ICs Selection Guide
- CMOS Logic ICs Usage Considerations
- Glossary of CMOS Logic IC Terms
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
合规代码
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
原产地分类
- 原产国:
- 马来西亚
- 组装原产国/地区:
- 不可用
- 扩散国家:
- 马来西亚
供货情况
-
库存：
-
0出现意外错误。请稍候重试。
-
在途量:
-
29,964预期 2026/10/16
-
生产周期：
-
24周 大于所示数量的预计工厂生产时间。