ZXMN3F30FHTA

Name: Diodes Incorporated ZXMN3F30FHTA
Brand: Diodes Incorporated
SKU: 522-ZXMN3F30FHTA
Price: 5.27 RMB
Availability: InStock

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Mouser编号：

522-ZXMN3F30FHTA

制造商编号：

ZXMN3F30FHTA

制造商：

Diodes Incorporated

说明：

MOSFET 30V N-Channel Enhance. Mode MOSFET

数据表:

ZXMN3F30FHTA 数据表 (PDF)

ECAD模型:

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库存量: 403

库存：: 403

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在途量:: 12,000

预期 2026/5/29
生产周期：: 40

周大于所示数量的预计工厂生产时间。

本产品所报告的交付时间长。

输入数量：

最少： 1 倍数： 1

单价:

¥-.--

总价:

¥-.--

预估关税:

封装:

整卷卷轴（请按3000的倍数订购）

剪切带

MouseReel™ (+¥15.00)

定价 (含13% 增值税)

数量	单价	总价
剪切带/MouseReel™ ^†
	¥5.9551	¥5.96
	¥3.7064	¥37.06
	¥2.3956	¥239.56
	¥1.8193	¥909.65
	¥1.6272	¥1,627.20
整卷卷轴（请按3000的倍数订购）
	¥1.2091	¥3,627.30

† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。 ↩

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产品属性	属性值	选择属性
制造商:	Diodes Incorporated
产品种类:	MOSFET
RoHS:
技术:	Si
安装风格:	SMD/SMT
封装 / 箱体:	SOT-23-3
晶体管极性:	N-Channel
通道数量:	1 Channel
Vds-漏源极击穿电压:	30 V
Id-连续漏极电流:	4.6 A
Rds On-漏源导通电阻:	47 mOhms
Vgs - 栅极-源极电压:	- 20 V, 20 V
Vgs th-栅源极阈值电压:	1 V
Qg-栅极电荷:	7.7 nC
最小工作温度:	- 55 C
最大工作温度:	+ 150 C
Pd-功率耗散:	1.4 W
通道模式:	Enhancement
封装:	Reel
封装:	Cut Tape
封装:	MouseReel
商标:	Diodes Incorporated
配置:	Single
组装国:	Not Available
扩散国家:	Not Available
原产国:	CN
下降时间:	2.6 ns
产品类型:	MOSFETs
上升时间:	2.6 ns
系列:	ZXMN2F30
工厂包装数量:	3000
子类别:	Transistors
晶体管类型:	1 N-Channel
典型关闭延迟时间:	17 ns
典型接通延迟时间:	1.6 ns
单位重量:	8 mg

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已选择的属性: 0

筛选文档:

CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541290065
JPHTS:: 8541210101
KRHTS:: 8541219000
TARIC:: 8541210000
MXHTS:: 85412101
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

ZXMN Enhancement Mode MOSFETs

The Diodes Inc. ZXMN Enhancement Mode MOSFETs are N-channel enhancement mode MOSFETs featuring low on-resistance, fast switching, and high avalanche withstand capability. The Diodes Inc. ZXMN MOSFETs are ideal for high-efficiency power management applications, including SLIC line drivers for VoIP applications, transformer driving switch, motor control, uninterrupted power supply, and more.

ZXMN2x & ZXMN3x MOSFETs

Diodes Incorporated ZXMN2x and ZXMN3x MOSFETs are offered in compact S0-8 and SOT23 packages. These MOSFETs are ideal for a range of space-starved switching and power management applications. The Diodes Inc. ZXMN2x and ZXMN3x MOSFETs are designed for external switches in buck/boost PoL converters, in which PCB footprint, thermal performance, and low threshold voltage are highly important.