TISP61089MDR-S

Bourns
652-TISP61089MDR-S
TISP61089MDR-S

制造商:

说明:
SCR High Surge Dual Progrmmble Protector

ECAD模型:
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供货情况

库存:
无库存
生产周期:
16 周 预计工厂生产时间。
最少: 10000   倍数: 2500
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
整卷卷轴(请按2500的倍数订购)
¥3.9776 ¥39,776.00

产品属性 属性值 选择属性
Bourns
产品种类: SCR
RoHS:  
TISP61089M
- 170 V
3 V
2.5 V
5 mA
- 40 C
+ 150 C
SMD/SMT
D008
Reel
商标: Bourns
转折电流 VBO: - 112 V
保持电流Ih最大值: - 150 mA
不重复通态电流: 11 A
产品类型: SCRs
工厂包装数量: 2500
子类别: Thyristors
商标名: TISP
单位重量: 80 mg
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已选择的属性: 0

CNHTS:
8541300000
CAHTS:
8541300000
USHTS:
8541300080
JPHTS:
8541300003
TARIC:
8541300000
ECCN:
EAR99

TISP Thyristor Overvoltage Protectors

Bourns TISP® Thyristor Surge Protectors are surge protective devices with characteristics very different than the normal SCR (Silicon Controlled Rectifier) and TRIAC (Triode for AC Control) type thyristors. Thyristor Surge Protector Device current parameters cover a range from a few nanoamps to hundreds of amps. A similar situation exists for thyristor SPD voltages, where there can be a wide range from several volts to hundreds. Bourns TISP Thyristor Surge Protectors are specially designed to provide protection for telecommunications equipment in instances where high voltages occur as a result of lightning strikes, power line crosses, or a/c power surges.

TISP61089M P-Gate Overvoltage Protector

Bourns TISP61089M dual forward-conducting buffered p-gate overvoltage protector is designed to protect monolithic SLICs against overvoltages caused by lightning, a.c. power contact, and induction. This Bourns dual voltage-programmable protector features high 70A 5/310 capability and supports voltages down to -155V. It also offers low 5mA gate triggering current and high 150mA holding current. TISP61089M limits voltages that exceed the SLIC supply rail voltage. The parameters of this overvoltage protector are specified to allow equipment compliance with Bellcore GR-1089-CORE, ITU-T K.21 and K.45, and YD/T-950.

电路保护设备

Bourns制造/供应各种电路保护技术,包括保险丝、PTC热敏电阻器、压敏电阻器、GDT、自恢复热熔断路器、浪涌保护器件、混合保护器、分立式半导体解决方案等。可靠的浪涌保护是一个关键设计考虑因素,可确保消费类电子产品、工业/通信设备、汽车、电池充电/储能基础设施和可再生能量采集生态系统的运行可靠性。