ART2K0 LDMOS RF Power Transistors

Ampleon ART2K0 LDMOS RF Power Transistors are based on Advanced Rugged Technology (ART) and designed to cover various ISM, broadcast, and communications applications. The unmatched 2000W LDMOS devices have a frequency range of 1MHz to 400MHz. Designed for broadband operation, the Ampleon ART2K0 transistors deliver high efficiency and excellent thermal stability/ruggedness with no device degradation.

结果: 4
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Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART2K0FES/SOT539/TRAY 511库存量
最低: 1
倍数: 1

Dual N-Channel LDMOS 65 V 100 mOhms 1 MHz to 400 MHz 28.4 dB 2 kW + 225 C SMD/SMT SOT539BN-5 Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART2K0FE/SOT539/TRAY 69库存量
120预期 2026/2/17
最低: 1
倍数: 1

Dual N-Channel LDMOS 65 V 100 mOhms 1 MHz to 400 MHz 28.4 dB 2 kW + 225 C Screw Mount SOT539AN-5 Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART2K0FEG/SOT1248/REEL

Dual N-Channel LDMOS 65 V 100 mOhms 1 MHz to 400 MHz 28.4 dB 2 kW + 225 C SMD/SMT SOT1248C-5 Reel
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART2K0FES/SOT539/TRAY

Dual N-Channel LDMOS 65 V 100 mOhms 1 MHz to 400 MHz 28.4 dB 2 kW + 225 C SMD/SMT SOT539BN-5 Tray