MCB70N15YHE3-TP

Name: Micro Commercial Components (MCC) MCB70N15YHE3-TP
Brand: Micro Commercial Components (MCC)
SKU: 833-MCB70N15YHE3-TP
Price: 27.74 RMB
Availability: InStock

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Mouser编号：

833-MCB70N15YHE3-TP

制造商编号：

MCB70N15YHE3-TP

制造商：

Micro Commercial Components (MCC)

说明：

MOSFET N-CHANNEL MOSFET,D2-PAK

寿命周期:

新产品:

此制造商的新产品。

数据表:

MCB70N15YHE3-TP 数据表 (PDF)

ECAD模型:

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库存量: 416

库存：: 416 可立即发货

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生产周期：: 24 周大于所示数量的预计工厂生产时间。

输入数量：

最少： 1 倍数： 1

单价:

¥-.--

总价:

¥-.--

预估关税:

封装:

整卷卷轴（请按800的倍数订购）

剪切带

MouseReel™ (+¥15.00)

定价 (含13% 增值税)

数量	单价	总价
剪切带/MouseReel™ ^†
	¥31.3462	¥31.35
	¥17.3681	¥173.68
	¥13.9781	¥1,397.81
	¥11.9102	¥5,955.10
整卷卷轴（请按800的倍数订购）
	¥11.6616	¥9,329.28

† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。 ↩

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产品属性	属性值	选择属性
制造商:	Micro Commercial Components (MCC)
产品种类:	MOSFET
RoHS:
REACH - SVHC:
技术:	Si
安装风格:	SMD/SMT
封装 / 箱体:	D2PAK-4
晶体管极性:	N-Channel
通道数量:	1 Channel
Vds-漏源极击穿电压:	150 V
Id-连续漏极电流:	70 A
Rds On-漏源导通电阻:	17 mOhms
Vgs - 栅极-源极电压:	- 20 V, 20 V
Vgs th-栅源极阈值电压:	4 V
Qg-栅极电荷:	40 nC
最小工作温度:	- 55 C
最大工作温度:	+ 175 C
Pd-功率耗散:	180 W
通道模式:	Enhancement
封装:	Reel
封装:	Cut Tape
封装:	MouseReel
商标:	Micro Commercial Components (MCC)
配置:	Single
下降时间:	13 ns
产品类型:	MOSFETs
上升时间:	14 ns
系列:	MCB70N15YHE3
工厂包装数量:	800
子类别:	Transistors
晶体管类型:	1 N-Channel
典型关闭延迟时间:	29 ns
典型接通延迟时间:	15 ns

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已选择的属性: 0

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数据表

MCB70N15YHE3-TP 数据表 (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MCB70N15YHE3 AEC-Q101 Qualified N-Channel MOSFET

Micro Commercial Components (MCC) MCB70N15YHE3 AEC-Q101 Qualified N-Channel MOSFET utilizes split gate trench MOSFET technology for automotive and industrial applications. Expertly engineered for high-power applications, this durable and capable component ensures efficiency and reliability in a versatile D2PAK package. Robust construction and a low junction-to-case thermal resistance deliver excellent thermal properties and operating junction capabilities up to +175°C. The Green MCB70N15YHE3 features a 150V maximum drain-source voltage, a ±20V maximum gate-source voltage, and 180W maximum total power dissipation.

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