650V IH系列IGBT

STMicroelectronics 650V IH系列IGBT的效率高,用于感应加热系统和软开关应用。该IGBT属于STPOWER™系列,超过了HB系列,目前用于感应加热应用。650V IH系列具有较低VCE(sat) 以及超低关闭能量,确保在最终应用中提高效率。现可提供采用TO-247长引线封装的40A和50A器件,20A和30A器件正在开发中。

结果: 10
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 封装 / 箱体 安装风格 配置 集电极—发射极最大电压 VCEO 集电极—射极饱和电压 栅极/发射极最大电压 在25 C的连续集电极电流 Pd-功率耗散 最小工作温度 最大工作温度 系列 资格 封装
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 1350 V, 35 A, soft-switching IH2 series IGBT 471库存量
600预期 2027/5/14
¥42.8496
¥23.9899
¥19.7637
¥17.0404
最低: 1
倍数: 1
Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 1350 V, 25 A, soft-switching IH2 series IGBT 518库存量
¥41.0303
¥23.0746
¥18.9388
¥16.2155
最低: 1
倍数: 1
Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 lo 828库存量
¥45.9119
¥30.6004
¥21.8316
¥19.3569
¥18.6111
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 650 V 1.5 V - 20 V, 20 V 100 A 300 W - 55 C + 175 C HB2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long 884库存量
¥31.6852
¥17.3681
¥14.1476
¥12.9046
¥11.3339
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C HB2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT 14库存量
¥58.5679
¥39.211
¥31.5157
¥27.9562
¥24.8148
最低: 1
倍数: 1
- 20 V, 20 V HB2 AEC-Q100 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa 42库存量
¥78.7497
¥49.8782
¥42.2733
¥36.725
最低: 1
倍数: 1
Si TO-247-4 Through Hole Single 650 V 1.55 V - 20 V, 20 V 145 A 441 W - 55 C + 150 C HB2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long 493库存量
¥27.5494
¥14.9725
¥12.1588
¥10.0909
¥9.3451
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C HB2 Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads
600预期 2027/1/1
¥50.1268
¥28.2048
¥23.4136
¥19.8541
¥19.3569
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C HB2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 lo 无库存交货期 22 周
¥42.6801
¥27.9562
¥20.8485
¥16.2946
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 650 V 1.5 V - 20 V, 20 V 80 A 238 W - 55 C + 175 C STGWA40IH65DF Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 20 A low-loss M series IGBT in a TO-247 long lead 无库存交货期 14 周
¥13.3227
¥12.3283
¥11.8311
¥11.5825
最低: 600
倍数: 600
Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 40 A 166 W - 55 C + 175 C HB2 Tube