RGS场终止沟槽型车用IGBT

ROHM Semiconductor RGS场终止沟槽汽车用IGBT是符合AEC-Q101标准的汽车用IGBT,有1200V和650V型号可供选择。这些IGBT具有同类领先的低导通损耗,可减小尺寸并提高应用的效率。RGS IGBT采用原始沟槽栅极和薄晶圆技术。这些技术有助于实现低集电极-发射极饱和电压 (V CE(sat)) 并降低开关损耗。ROHM Semiconductor RGS IGBT可为各种高电压和大电流应用提供更高的节能效果。

结果: 13
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 封装 / 箱体 安装风格 配置 集电极—发射极最大电压 VCEO 集电极—射极饱和电压 栅极/发射极最大电压 在25 C的连续集电极电流 Pd-功率耗散 最小工作温度 最大工作温度 资格 封装
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 40A TRNCH 493库存量
¥79.9023
¥46.895
¥39.7082
¥38.5443
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 2.1 V 30 V 73 A 272 W - 40 C + 175 C AEC-Q101 Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 650V 50A TRNCH 749库存量
¥85.6992
¥50.8726
¥49.2115
¥46.3187
¥46.2396
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 2.1 V 30 V 88 A 326 W - 40 C + 175 C AEC-Q101 Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) TO247 1200V 15A TRNCH
547库存量
¥81.3939
¥47.8894
¥40.5331
¥39.9568
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 30 A 267 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) IGBT Trench Field Stop 1200 V 50 A 395 W Through Hole TO-247N
362库存量
¥81.3939
¥51.867
¥40.5331
¥40.0359
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 50 A 395 W - 40 C + 175 C AEC-Q101 Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 10 s Short-Circuit Tolerance, 1200V 40A, TO-247N, Field Stop Trench IGBT for Automotive 318库存量
¥103.9713
¥62.4551
¥57.5735
¥57.4831
¥55.0875
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 80 A 555 W - 40 C + 175 C AEC-Q101 Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 8 s Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive
234库存量
¥72.7946
¥42.4315
¥35.7306
¥34.4876
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 2.1 V 30 V 56 A 223 W - 40 C + 175 C AEC-Q101 Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 10 s Short-Circuit Tolerance, 1200V 25A, TO-247N, Field Stop Trench IGBT for Automotive
673库存量
¥85.0325
¥50.2059
¥42.5106
¥42.3524
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 50 A 395 W - 40 C + 175 C AEC-Q101 Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 8 s Short-Circuit Tolerance, 650V 50A, TO-247N, Field Stop Trench IGBT for Automotive
432库存量
¥78.7497
¥55.4152
¥41.4371
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 2.1 V 30 V 88 A 326 W - 40 C + 175 C AEC-Q101 Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 8 s Short-Circuit Tolerance, 650V 40A, TO-247N, Field Stop Trench IGBT for Automotive
673库存量
¥68.5684
¥48.3075
¥36.1487
¥33.8322
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 2.1 V 30 V 73 A 272 W - 40 C + 175 C AEC-Q101 Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) IGBT FieldStop Trnch 50A; TO-247N; 650V
379库存量
¥54.4321
¥31.0185
¥25.2329
¥23.4136
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 2.1 V 30 V 88 A 326 W - 40 C + 175 C AEC-Q101 Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 8 s Short-Circuit Tolerance, 650V 30A, TO-247N, Field Stop Trench IGBT for Automotive
285库存量
¥65.8451
¥44.0926
¥30.1032
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 2.1 V 30 V 56 A 223 W - 40 C + 175 C AEC-Q101 Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) IGBT Trench Field Stop 1200 V 80 A 555 W Through Hole TO-247N
179库存量
¥122.9214
¥74.9416
¥67.6644
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 80 A 555 W - 40 C + 175 C AEC-Q101 Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 10 s Short-Circuit Tolerance, 1200V 15A, Automotive Field Stop Trench IGBT
96库存量
¥70.2295
¥40.8608
¥34.3294
¥32.6683
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 30 A 267 W - 40 C + 175 C Tube