SICW028N120A4-BP

Name: Micro Commercial Components (MCC) SICW028N120A4-BP
Brand: Micro Commercial Components (MCC)
SKU: 833-SICW028N120A4-BP
Price: 198.52 RMB
Availability: InStock

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Mouser编号：

833-SICW028N120A4-BP

制造商编号：

SICW028N120A4-BP

制造商：

Micro Commercial Components (MCC)

说明：

碳化硅MOSFET

数据表:

SICW028N120A4-BP 数据表 (PDF)

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库存量: 343

库存：: 343 可立即发货

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生产周期：: 28 周大于所示数量的预计工厂生产时间。

本产品所报告的交付时间长。

输入数量：

最少： 1 倍数： 1

单价:

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总价:

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预估关税:

定价 (含13% 增值税)

数量	单价	总价
	¥224.3276	¥224.33
	¥172.3815	¥1,723.82
	¥149.0583	¥14,905.83

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产品属性	属性值	选择属性
制造商:	Micro Commercial Components (MCC)
产品种类:	碳化硅MOSFET
RoHS:
安装风格:	Through Hole
封装 / 箱体:	TO-247-4
晶体管极性:	N-Channel
通道数量:	1 Channel
Vds-漏源极击穿电压:	1.2 kV
Id-连续漏极电流:	80 A
Rds On-漏源导通电阻:	30 mOhms
Vgs - 栅极-源极电压:	- 5 V, + 22 V
Vgs th-栅源极阈值电压:	3 V
Qg-栅极电荷:	168 nC
最小工作温度:	- 55 C
最大工作温度:	+ 175 C
Pd-功率耗散:	375 W
通道模式:	Enhancement
商标:	Micro Commercial Components (MCC)
配置:	Single
下降时间:	11 ns
封装:	Bulk
产品类型:	SiC MOSFETS
上升时间:	13 ns
系列:	SICW028N120A4
工厂包装数量:	1800
子类别:	Transistors
技术:	SiC
典型关闭延迟时间:	42.5 ns
典型接通延迟时间:	14 ns

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数据表

SICW028N120A4-BP 数据表 (PDF)

合规代码

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

原产地分类

原产国:: 中国
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

SICW028N120A4 1200V SiC MOSFET

Micro Commercial Components (MCC) SICW028N120A4 1200V SiC MOSFET is designed with a low on-resistance of just 28mΩ at a gate-source voltage of 18V. This N-channel MOSFET works well with the popular D2PAK 4-pin footprint and includes a Kelvin source pin to reduce switching losses and boost energy efficiency significantly. This SICW028N120A4 MOSFET features a high avalanche ruggedness and has the ability to operate at high junction temperatures of 175°C. This MOSFET ensures superior thermal performance and efficient heat management, eliminating the need for additional cooling components while increasing product reliability and lifespan. The SICW028N120A4 MOSFET is a robust and reliable solution for a host of industrial and commercial applications dealing in harsh environments.

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