|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ75R033M2HXTMA1
- Infineon Technologies
-
1:
¥109.4292
-
611库存量
-
新产品
|
Mouser 零件编号
726-IMDQ75R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
611库存量
|
|
|
¥109.4292
|
|
|
¥81.5634
|
|
|
¥67.913
|
|
|
¥59.6414
|
|
|
¥57.3249
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
53 A
|
41.3 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
37 nC
|
- 55 C
|
+ 175 C
|
217 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R007M2HXTMA1
- Infineon Technologies
-
1:
¥301.2467
-
167库存量
-
新产品
|
Mouser 零件编号
726-IMBG75R007M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
167库存量
|
|
|
¥301.2467
|
|
|
¥245.8315
|
|
|
¥217.1295
|
|
|
¥216.8809
|
|
|
¥184.2917
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
198 A
|
9 mOhms
|
- 7 V, 23 V
|
5.6 V
|
169 nC
|
- 55 C
|
+ 175 C
|
651 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R025M2HXTMA1
- Infineon Technologies
-
1:
¥122.5033
-
1,056库存量
-
新产品
|
Mouser 零件编号
726-IMBG75R025M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
1,056库存量
|
|
|
¥122.5033
|
|
|
¥71.2239
|
|
|
¥60.3872
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
64 A
|
31 mOhms
|
- 7 V, 23 V
|
5.6 V
|
49 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R033M2HXTMA1
- Infineon Technologies
-
1:
¥105.3838
-
1,052库存量
-
新产品
|
Mouser 零件编号
726-IMBG75R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
1,052库存量
|
|
|
¥105.3838
|
|
|
¥59.551
|
|
|
¥58.5679
|
|
|
¥55.4152
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
50 A
|
41.3 mOhms
|
- 7 V, 23 V
|
5.6 V
|
37 nC
|
- 55 C
|
+ 175 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R050M2HXTMA1
- Infineon Technologies
-
1:
¥79.9814
-
1,174库存量
-
新产品
|
Mouser 零件编号
726-IMBG75R050M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
1,174库存量
|
|
|
¥79.9814
|
|
|
¥54.6807
|
|
|
¥45.0757
|
|
|
¥41.1885
|
|
|
¥34.9848
|
|
|
查看
|
|
|
¥34.1599
|
|
|
报价
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
34 A
|
65 mOhms
|
- 7 V, 23 V
|
5.6 V
|
24 nC
|
- 55 C
|
+ 175 C
|
135 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ75R050M2HXTMA1
- Infineon Technologies
-
1:
¥82.1397
-
1,080库存量
-
新产品
|
Mouser 零件编号
726-IMDQ75R050M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,080库存量
|
|
|
¥82.1397
|
|
|
¥56.0819
|
|
|
¥46.2396
|
|
|
¥41.2789
|
|
|
¥35.9001
|
|
|
查看
|
|
|
¥35.0752
|
|
|
报价
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
36 A
|
65 mhms
|
- 7 V, + 23 V
|
5.6 V
|
24 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SiC MOSFET, 750 V
- IMZA75R011M2HXKSA1
- Infineon Technologies
-
1:
¥235.8197
-
478库存量
-
新产品
|
Mouser 零件编号
726-IMZA75R011M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET SiC MOSFET, 750 V
|
|
478库存量
|
|
|
¥235.8197
|
|
|
¥188.8456
|
|
|
¥163.285
|
|
|
¥154.5953
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
116 A
|
13.8 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
106 nC
|
- 55 C
|
+ 175 C
|
333 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SiC MOSFET, 750 V
- IMZA75R020M2HXKSA1
- Infineon Technologies
-
1:
¥159.895
-
340库存量
-
新产品
|
Mouser 零件编号
726-IMZA75R020M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET SiC MOSFET, 750 V
|
|
340库存量
|
|
|
¥159.895
|
|
|
¥119.441
|
|
|
¥103.2255
|
|
|
¥97.7676
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
72 A
|
25 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
59 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SiC MOSFET, 750 V
- IMZA75R033M2HXKSA1
- Infineon Technologies
-
1:
¥115.8815
-
476库存量
-
新产品
|
Mouser 零件编号
726-IMZA75R033M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET SiC MOSFET, 750 V
|
|
476库存量
|
|
|
¥115.8815
|
|
|
¥64.7716
|
|
|
¥62.7037
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
47 A
|
65.6 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
37 nC
|
- 55 C
|
+ 175 C
|
164 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SiC MOSFET, 750 V
- IMZA75R040M2HXKSA1
- Infineon Technologies
-
1:
¥98.5925
-
338库存量
-
240在途量
-
新产品
|
Mouser 零件编号
726-IMZA75R040M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET SiC MOSFET, 750 V
|
|
338库存量
240在途量
|
|
|
¥98.5925
|
|
|
¥71.303
|
|
|
¥59.4719
|
|
|
¥52.9405
|
|
|
¥44.9175
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
40 A
|
80 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
30 nC
|
- 55 C
|
+ 175 C
|
142 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SiC MOSFET, 750 V
- IMZA75R050M2HXKSA1
- Infineon Technologies
-
1:
¥88.1739
-
490库存量
-
新产品
|
Mouser 零件编号
726-IMZA75R050M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET SiC MOSFET, 750 V
|
|
490库存量
|
|
|
¥88.1739
|
|
|
¥47.8894
|
|
|
¥44.3412
|
|
|
¥38.4652
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
32 A
|
104 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
24 nC
|
- 55 C
|
+ 175 C
|
122 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SiC MOSFET, 750 V
- IMZA75R060M2HXKSA1
- Infineon Technologies
-
1:
¥78.5011
-
500库存量
-
新产品
|
Mouser 零件编号
726-IMZA75R060M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET SiC MOSFET, 750 V
|
|
500库存量
|
|
|
¥78.5011
|
|
|
¥42.1038
|
|
|
¥38.872
|
|
|
¥38.7929
|
|
|
¥37.6403
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
28 A
|
124 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
20 nC
|
- 55 C
|
+ 175 C
|
108 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SiC MOSFET, 750V, G2, 11 m
- IMBG75R011M2HXTMA1
- Infineon Technologies
-
1:
¥223.0846
-
28库存量
-
新产品
|
Mouser 零件编号
726-IMBG75R011M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SiC MOSFET, 750V, G2, 11 m
|
|
28库存量
|
|
|
¥223.0846
|
|
|
¥178.5852
|
|
|
¥154.4258
|
|
|
¥147.8153
|
|
|
¥125.5656
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
129 A
|
22 mOhms
|
- 7 V, + 23 V
|
4.5 V
|
106 nC
|
- 55 C
|
+ 175 C
|
416 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SiC MOSFET, 750V, G2, 16 m
- IMBG75R016M2HXTMA1
- Infineon Technologies
-
1:
¥167.9971
-
35库存量
-
新产品
|
Mouser 零件编号
726-IMBG75R016M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SiC MOSFET, 750V, G2, 16 m
|
|
35库存量
|
|
|
¥167.9971
|
|
|
¥125.4752
|
|
|
¥108.5252
|
|
|
¥103.8131
|
|
|
¥88.1739
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
93 A
|
32 mOhms
|
- 7 V, + 23 V
|
4.5 V
|
74 nC
|
- 55 C
|
+ 175 C
|
318 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SiC MOSFET, 750V, G2, 20 m
- IMBG75R020M2HXTMA1
- Infineon Technologies
-
1:
¥152.6969
-
35库存量
-
新产品
|
Mouser 零件编号
726-IMBG75R020M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SiC MOSFET, 750V, G2, 20 m
|
|
35库存量
|
|
|
¥152.6969
|
|
|
¥116.2996
|
|
|
¥96.9427
|
|
|
¥87.2699
|
|
|
¥74.1167
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
79 A
|
40 mOhms
|
- 7 V, + 23 V
|
4.5 V
|
59 nC
|
- 55 C
|
+ 175 C
|
282 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R040M2HXTMA1
- Infineon Technologies
-
1:
¥89.2474
-
159库存量
-
新产品
|
Mouser 零件编号
726-IMBG75R040M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
159库存量
|
|
|
¥89.2474
|
|
|
¥63.1105
|
|
|
¥52.6128
|
|
|
¥48.0589
|
|
|
¥40.7817
|
|
|
查看
|
|
|
¥39.7873
|
|
|
报价
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
42 A
|
50 mOhms
|
- 7 V, 23 V
|
5.6 V
|
30 nC
|
- 55 C
|
+ 175 C
|
156 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R060M2HXTMA1
- Infineon Technologies
-
1:
¥73.2918
-
167库存量
-
新产品
|
Mouser 零件编号
726-IMBG75R060M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
167库存量
|
|
|
¥73.2918
|
|
|
¥51.6184
|
|
|
¥41.7761
|
|
|
¥37.1431
|
|
|
¥30.6004
|
|
|
查看
|
|
|
¥29.8659
|
|
|
报价
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
29 A
|
78 mOhms
|
- 7 V, 23 V
|
5.6 V
|
20 nC
|
- 55 C
|
+ 175 C
|
116 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ75R040M2HXTMA1
- Infineon Technologies
-
1:
¥92.3097
-
67库存量
-
750预期 2026/8/21
-
新产品
|
Mouser 零件编号
726-IMDQ75R040M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
67库存量
750预期 2026/8/21
|
|
|
¥92.3097
|
|
|
¥65.2575
|
|
|
¥54.3417
|
|
|
¥47.7312
|
|
|
¥42.1829
|
|
|
查看
|
|
|
¥41.1885
|
|
|
报价
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
45 A
|
50 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SiC MOSFET, 750 V
- IMZA75R007M2HXKSA1
- Infineon Technologies
-
1:
¥318.8747
-
6库存量
-
480在途量
-
新产品
|
Mouser 零件编号
726-IMZA75R007M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET SiC MOSFET, 750 V
|
|
6库存量
480在途量
|
|
|
¥318.8747
|
|
|
¥260.2277
|
|
|
¥229.8646
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
172 A
|
9 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
169 nC
|
- 55 C
|
+ 175 C
|
483 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2
- AIMDQ75R025M2HXTMA1
- Infineon Technologies
-
1:
¥132.5942
-
544库存量
-
新产品
|
Mouser 零件编号
726-AIMDQ75R025M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2
|
|
544库存量
|
|
|
¥132.5942
|
|
|
¥93.3832
|
|
|
¥78.9079
|
|
|
¥64.523
|
|
|
¥64.4326
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
|
840 V
|
70 A
|
31 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
49 nC
|
- 55 C
|
+ 175 C
|
272 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2
- AIMDQ75R060M2HXTMA1
- Infineon Technologies
-
1:
¥76.0151
-
1,215库存量
-
新产品
|
Mouser 零件编号
726-AIMDQ75R060M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2
|
|
1,215库存量
|
|
|
¥76.0151
|
|
|
¥51.9461
|
|
|
¥38.2957
|
|
|
¥35.6515
|
|
|
¥35.6515
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
|
840 V
|
30 A
|
78 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
20 nC
|
- 55 C
|
+ 175 C
|
128 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMDQ75R016M2HXTMA1
- Infineon Technologies
-
1:
¥169.5678
-
738库存量
-
新产品
|
Mouser 零件编号
726-IMDQ75R016M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
738库存量
|
|
|
¥169.5678
|
|
|
¥121.0908
|
|
|
¥108.2766
|
|
|
¥105.3838
|
|
|
¥101.0785
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
|
840 V
|
103 A
|
20 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
74 nC
|
- 55 C
|
+ 175 C
|
394 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMDQ75R025M2HXTMA1
- Infineon Technologies
-
1:
¥124.9893
-
849库存量
-
新产品
|
Mouser 零件编号
726-IMDQ75R025M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
849库存量
|
|
|
¥124.9893
|
|
|
¥87.7671
|
|
|
¥73.1223
|
|
|
¥59.7205
|
|
|
¥59.6414
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
|
840 V
|
70 A
|
31 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
49 nC
|
- 55 C
|
+ 175 C
|
272 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMDQ75R060M2HXTMA1
- Infineon Technologies
-
1:
¥73.2918
-
748库存量
-
750预期 2027/7/30
-
新产品
|
Mouser 零件编号
726-IMDQ75R060M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
748库存量
750预期 2027/7/30
|
|
|
¥73.2918
|
|
|
¥49.9573
|
|
|
¥36.725
|
|
|
¥33.9113
|
|
|
¥33.9113
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
|
840 V
|
30 A
|
78 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
20 nC
|
- 55 C
|
+ 175 C
|
128 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2
- AIMDQ75R016M2HXTMA1
- Infineon Technologies
-
1:
¥178.5852
-
1,500在途量
-
新产品
|
Mouser 零件编号
726-AIMDQ75R016M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2
|
|
1,500在途量
|
|
|
¥178.5852
|
|
|
¥127.9612
|
|
|
¥115.7233
|
|
|
¥108.028
|
|
|
¥108.028
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
|
840 V
|
103 A
|
20 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
74 nC
|
- 55 C
|
+ 175 C
|
394 W
|
Enhancement
|
CoolSiC
|
|
