DI0A35N06PGK

Diotec Semiconductor
637-DI0A35N06PGK
DI0A35N06PGK

制造商:

说明:
MOSFET DFN1006-3, N, 60V, 0.35A, 1.4?, 150C

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Diotec Semiconductor
产品种类: MOSFET
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商标: Diotec Semiconductor
产品类型: MOSFETs
工厂包装数量: 10000
子类别: Transistors
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TARIC:
8541290000
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原产国:
中国
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DI0A35N06PGK N-Channel Power MOSFET

Diotec Semiconductor DI0A35N06PGK N-Channel Power MOSFET is fabricated using advanced trench technology and offers low on-state resistance, fast switching characteristics, and very low gate charge. This makes it suitable for space‑constrained and battery‑powered designs. The DI0A35N06PGK MOSFET features a 60V drain-source voltage (VDSS), 223mW power dissipation, and 350mA continuous drain current (ID). This power MOSFET operates from -55°C to 150°C storage and junction temperature range. The DI0A35N06PGK N-channel power MOSFET is designed for low‑power switching and polarity protection applications. Typical applications include power management units, battery-powered devices, load switches, and polarity protection.