DI0A35N06PGK

Name: Diotec Semiconductor DI0A35N06PGK
Brand: Diotec Semiconductor
SKU: 637-DI0A35N06PGK
Price: 1.39 RMB
Availability: OutOfStock

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Mouser编号：

637-DI0A35N06PGK

制造商编号：

DI0A35N06PGK

制造商：

Diotec Semiconductor

说明：

MOSFET DFN1006-3, N, 60V, 0.35A, 1.4?, 150C

寿命周期:

新产品:

此制造商的新产品。

数据表:

DI0A35N06PGK 数据表 (PDF)

ECAD模型:

下载免费库加载程序，将此文件转换，以供您的ECAD工具使用。了解详情。

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了解Diotec Semiconductor DI0A35N06PGK详情

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产品属性	属性值	选择属性
制造商:	Diotec Semiconductor
产品种类:	MOSFET
封装:	Reel
封装:	Cut Tape
商标:	Diotec Semiconductor
产品类型:	MOSFETs
工厂包装数量:	10000
子类别:	Transistors

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已选择的属性: 0

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数据表

DI0A35N06PGK 数据表 (PDF)

Models

DI0A35N06PGK Symbol & Footprint by SnapMagic

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合规代码

CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

原产地分类

原产国:: 中国
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

DI0A35N06PGK N-Channel Power MOSFET

Diotec Semiconductor DI0A35N06PGK N-Channel Power MOSFET is fabricated using advanced trench technology and offers low on-state resistance, fast switching characteristics, and very low gate charge. This makes it suitable for space‑constrained and battery‑powered designs. The DI0A35N06PGK MOSFET features a 60V drain-source voltage (V_DSS), 223mW power dissipation, and 350mA continuous drain current (I_D). This power MOSFET operates from -55°C to 150°C storage and junction temperature range. The DI0A35N06PGK N-channel power MOSFET is designed for low‑power switching and polarity protection applications. Typical applications include power management units, battery-powered devices, load switches, and polarity protection.