2SAR553PHZGT100

Name: ROHM Semiconductor 2SAR553PHZGT100
Brand: ROHM Semiconductor
SKU: 755-2SAR553PHZGT100
Price: 6.88 RMB
Availability: InStock

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Mouser编号：

755-2SAR553PHZGT100

制造商编号：

2SAR553PHZGT100

制造商：

ROHM Semiconductor

说明：

双极晶体管 - 双极结型晶体管(BJT) 50V 2A SOT89 BJT TRANS

数据表:

2SAR553PHZGT100 数据表 (PDF)

ECAD模型:

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产品属性	属性值	选择属性
制造商:	ROHM Semiconductor
产品种类:	双极晶体管 - 双极结型晶体管(BJT)
RoHS:
REACH - SVHC:
技术:	Si
安装风格:	SMD/SMT
封装 / 箱体:	SOT-89-3
晶体管极性:	PNP
配置:	Single
最大直流电集电极电流:	2 A
集电极—发射极最大电压 VCEO:	50 V
集电极—基极电压 VCBO:	50 V
发射极 - 基极电压 VEBO:	6 V
集电极—射极饱和电压:	400 mV
Pd-功率耗散:	2 W
增益带宽产品fT:	320 MHz
最大工作温度:	+ 150 C
封装:	Reel
封装:	Cut Tape
商标:	ROHM Semiconductor
直流集电极/Base Gain hfe Min:	180 at - 50 mA, - 2 V
直流电流增益 hFE 最大值:	450 at - 50 mA, - 2 V
产品类型:	BJTs - Bipolar Transistors
工厂包装数量:	1000
子类别:	Transistors
零件号别名:	2SAR553PHZG

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ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50

筛选文档:

数据表

2SAR553PHZGT100 数据表 (PDF)

Specification Sheets

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合规代码

CNHTS:: 8541290000
USHTS:: 8541290055
ECCN:: EAR99

原产地分类

原产国:: 韩国
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

Standard Bipolar Transistors

ROHM Semiconductor Standard Bipolar Transistors are semiconductors that amplify analog or digital signals. The bipolar transistors amplify current, but the devices can be connected in circuits designed to amplify voltage or power. These ROHM devices are available in both PNP and NPN polarities.

汽车用双极晶体管

ROHM Semiconductor汽车用双极晶体管是符合AEC-Q101标准的器件。这些汽车用双极晶体管采用NPN和PNP配置，设有发射器 (E)、基极 (B) 和集电极 (C) 作为其端子。双极晶体管的集电极－发射极电压范围为-30V至65V，集电极电流为-600mA至600mA。这些汽车用双极晶体管采用SOT-23、TO-252、LPTL和SOT-323封装。ROHM Semiconductor双极晶体管用于音频频率小信号放大器和低频放大器。

AEC-Q101 Qualified Transistors

ROHM Semiconductor AEC-Q101 Qualified Transistors feature NPN, PNP, and dual transistors with or without built-in resistors. These transistors include middle power transistors, low-frequency amplifiers, general-purpose digital (bias resistor built-in) transistors, dual digital transistors, and medium power transistors. The AEC-Q101-qualified transistors offer variants with V_CC, V_CEO, and I_C ratings. These transistors feature built-in bias resistors, enabling the desired configuration without connecting external input resistors.

2Sx Bipolar Junction Transistors (BJTs)

ROHM 2Sx Bipolar Junction Transistors (BJTs) are designed for use in industrial and consumer applications. These BJTs are available in both PNP and NPN polarities. The 2Sx BJT devices are housed in a variety of packages and are designed for medium power surface mount applications. The 2Sx BJTs feature a wide storage temperature (T_stg) range of -55°C to +150°C and a junction temperature (T_J) of +150°C. Typical applications include general purpose small signal amplifiers, power supplies, high-speed switching, and low-frequency amplifiers.