中国
BGA7M1N6E6327XTSA1
图像仅供参考
请参阅产品规格
请参阅产品规格
726-BGA7M1N6E6327XTS
BGA7M1N6E6327XTSA1
制造商：
说明：
射频放大器 RF SILICON MMIC
射频放大器 RF SILICON MMIC
寿命周期:
NRND:
不建议用于新设计。
数据表
Models
- Infineon-BGA7M1N6-AWR-MWO-Application-Example-SM-v01_00-EN (邮政)
- Infineon-BGA7M1N6-Keysight-ADS-Application-Example-SM-v01_00-EN
- Infineon-MMIC-LNA-AWR-MWO-Design-Kit-SM-v02_00-EN (邮政)
- Infineon-MMIC-LNA-Keysight-ADS-Design-Kit-SM-v02_00-EN (邮政)
- PCB Footprints and Symbols - BGA7M1N6 - LTE - 3G LNAs - Altium - v2.0.zip (邮政)
- PCB Footprints and Symbols - BGA7M1N6 - LTE - 3G LNAs - Cadence - v2.0.zip (邮政)
- PCB Footprints and Symbols - BGA7M1N6 - LTE - 3G LNAs - Eagle - v2.0.zip (邮政)
- PCB Footprints and Symbols - BGA7M1N6 - LTE - 3G LNAs - Mentor - v2.0.zip (邮政)
- PCB Footprints and Symbols - BGA7M1N6 - LTE LNA Solutions - MWO – v2.0.zip (邮政)
- Simulation Data: Infineon-BGA7M1N6-SD-v01_00-EN (邮政)
- Simulation Tool: Simulate ONLINE - Low Noise Amplifier BGA7M1N6 for Single Band LTE Supporting Band-2 (1930-1990MHz) (Vcc= 1.8 V)
- Simulation Tool: Simulate ONLINE - Low Noise Amplifier BGA7M1N6 for Single Band LTE Supporting Band-2 (1930-1990MHz) (Vcc= 2.8 V)
- Simulation Tool: Simulate ONLINE - Low Noise Amplifier BGA7M1N6 for Single Band LTE Supporting Band-3 (1805-1880MHz) (Vcc= 1.8 V)
- Simulation Tool: Simulate ONLINE - Low Noise Amplifier BGA7M1N6 for Single Band LTE Supporting Band-4 (2110-2155 MHz) (Vcc= 1.8 V)
- Simulation Tool: Simulate ONLINE - Low Noise Amplifier BGA7M1N6 for Single Band LTE Supporting Band-4 (2110-2155 MHz) (Vcc= 2.8 V)
- Simulation Tool: Simulate ONLINE - Low Noise Amplifier BGA7M1N6 for Single Band LTE Supporting Band-3 (1805-1880MHz) (Vcc= 2.8 V)
Product Catalogs
Test/Quality Data
合规代码
- CNHTS:
- 8542339000
- CAHTS:
- 8542330000
- USHTS:
- 8542330001
- MXHTS:
- 8542330201
- ECCN:
- EAR99
原产地分类
- 原产国:
- 德国
- 组装原产国/地区:
- 马来西亚
- 扩散国家:
- 德国
供货情况
-
库存：
-
无库存出现意外错误。请稍候重试。
-
生产周期：
-
20 周 预计工厂生产时间。
此产品免运费
定价 (含13% 增值税)
| 数量 | 单价 |
总价
|
|---|---|---|
| 整卷卷轴（请按15000的倍数订购） | ||
| ¥3.729 | ¥55,935.00 | |