CY7C1314KV18-250BZXC

Infineon Technologies
727-C1314KV18250BZXC
CY7C1314KV18-250BZXC

制造商:

说明:
静态随机存取存储器 18Mb 250Mhz 1.8V 512Kx36 QDR II 静态随机存取存储器

寿命周期:
寿命结束:
将过时且制造商将停产。
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产品属性 属性值 选择属性
Infineon
产品种类: 静态随机存取存储器
RoHS:  
18 Mbit
512 k x 36
450 ps
250 MHz
Parallel
1.9 V
1.7 V
670 mA
0 C
+ 70 C
SMD/SMT
FBGA-165
Tray
商标: Infineon Technologies
存储类型: Volatile
湿度敏感性: Yes
产品类型: SRAM
系列: CY7C1314KV18
工厂包装数量: 136
子类别: Memory & Data Storage
类型: Synchronous
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已选择的属性: 0

合规代码
CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
854232019
KRHTS:
8542321020
MXHTS:
8542320201
ECCN:
3A991.b.2.b
原产地分类
原产国:
中国台湾
组装原产国/地区:
不可用
扩散国家:
不可用
发货时,国家/地区可能会发生变化。

QDR™-II DDR-II Sync SRAM

Infineon Technologies QDR™-II DDR-II Sync SRAM offers a maximum speed of 333MHz, densities up to 144Mb, read latencies of 1.5 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. The QDR-II family also includes double data rate (DDR-II) devices. DDR-II devices are similar to QDR-II devices, except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and write, reducing the number of required data pin connections.

库存量: 12

库存:
12 可立即发货
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥314.818 ¥314.82
¥291.2462 ¥2,912.46
¥281.9802 ¥7,049.51
¥252.5324 ¥12,626.62
¥245.0857 ¥24,508.57
¥237.4808 ¥64,594.78
544 报价