中国
GT30J65MRB,S1E
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请参阅产品规格
请参阅产品规格
757-GT30J65MRBS1E
GT30J65MRB,S1E
制造商：
说明：
绝缘栅双极晶体管(IGBT) 650V SILICON N-CHANNEL IGBT, TO-3PN, IC=60A
绝缘栅双极晶体管(IGBT) 650V SILICON N-CHANNEL IGBT, TO-3PN, IC=60A
数据表
Application Notes
- IGBT for Voltage-Resonant Inverters: GT20N135SRA
- IGBTs (Insulated Gate Bipolar Transistor)
- Improving the Load Transient Response of LDOs
- LDO Regulator Application to Power Supplies for High-Frequency Circuits
- LDO Regulator Application to Power Supply Circuits for Digital Cores of CMOS Image Sensors
- LDO Regulator Application to Power Supply Circuits for MCUs
- LDO Regulators Glossary
- Low Drop-Out (LDO) Regulator IC
- Mechanism of LDO Oscillation and Reducing the Susceptibility to Oscillation
- Power Efficiency Optimization
- Simple Guide to Improving Ripple Rejection Ratio of LDO Regulators
- Thermal Design to Maximize the Performance of LDO Regulators
Models
Product Catalogs
Test/Quality Data
合规代码
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 854129000
- TARIC:
- 8541290000
- MXHTS:
- 8541299900
- ECCN:
- EAR99
原产地分类
- 原产国:
- 中国
- 组装原产国/地区:
- 不可用
- 扩散国家:
- 不可用
供货情况
-
库存：
-
无库存出现意外错误。请稍候重试。
-
生产周期：
定价 (含13% 增值税)
| 数量 | 单价 |
总价
|
|---|---|---|
| ¥33.0864 | ¥33.09 | |
| ¥19.6846 | ¥196.85 | |
| ¥14.0572 | ¥1,405.72 | |
| ¥11.5825 | ¥5,791.25 | |
| ¥10.7576 | ¥10,757.60 | |
| ¥10.17 | ¥25,425.00 |