IPP057N08N3 MOSFET

结果: 13
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 187库存量
¥29.2783
¥25.7301
¥21.1762
¥21.0971
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 80 A 4.9 mOhms 20 V 2 V 69 nC - 55 C + 175 C 150 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET N-Ch 80V 100A TO220-3 2,122库存量
¥29.6964
¥14.9725
¥13.4809
¥10.17
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 100 A 3.5 mOhms 20 V 3 V 117 nC - 55 C + 175 C 214 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 648库存量
¥28.7811
¥18.7806
¥13.1532
¥11.0062
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 25 A 60 mOhms 20 V 2 V 22 nC - 55 C + 175 C 136 W Enhancement OptiMOS Tube
Infineon Technologies IPP034N08N5XKSA1
Infineon Technologies MOSFET IFX FET > 60-80V 615库存量
¥32.0129
¥16.2155
¥14.6448
¥12.9046
¥11.2548
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 3.4 mOhms 20 V 3.8 V 69 nC - 55 C + 175 C 167 W Enhancement Tube
Infineon Technologies MOSFET OptiMOS 6 power MOSFET 150 V normal level in TO-220 package
21,819在途量
¥31.9338
¥16.2155
¥14.7239
¥11.413
最低: 1
倍数: 1
Si Through Hole PG-TO220-3 N-Channel 1 Channel 150 V 128 A 5.4 mOhms 20 V 4 V 44 nC - 55 C + 175 C 211 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3 252库存量
¥17.1195
¥10.7576
¥7.0625
¥5.5935
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 30 V 50 A 4.6 mOhms 20 V 1 V 31 nC - 55 C + 175 C 68 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET N-Ch 80V 100A TO220-3 OptiMOS 3 168库存量
¥49.381
¥32.3406
¥24.069
¥20.1818
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 100 A 2.8 mOhms 20 V 3 V 206 nC - 55 C + 175 C 300 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 456库存量
¥18.6111
¥9.6728
¥7.8083
¥7.1416
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 90 A 3.3 mOhms 20 V 2 V 98 nC - 55 C + 175 C 188 W Enhancement OptiMOS Tube
Infineon Technologies IPP023N08N5XKSA1
Infineon Technologies MOSFET IFX FET > 60-80V
Mouser 目前在您所在地区不销售该产品。
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2.3 mOhms 20 V 3.8 V 133 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies IPP027N08N5XKSA1
Infineon Technologies MOSFET IFX FET > 60-80V
Mouser 目前在您所在地区不销售该产品。
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2.7 mOhms 20 V 3.8 V 99 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies MOSFET N-Ch 80V 120A TO220-3 773库存量
¥59.0538
¥38.7138
¥28.5325
¥25.312
¥22.6678
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 1.8 mOhms 20 V 2.2 V 223 nC - 55 C + 175 C 375 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET N-Ch 80V 120A TO220-3 639库存量
¥51.9461
¥28.3743
¥23.6622
¥22.6678
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 1.8 mOhms 20 V 2.2 V 223 nC - 55 C + 175 C 375 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET N-Ch 80V 120A TO220-3 84库存量
¥32.0129
¥16.2155
¥14.6448
¥11.9102
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 4.4 mOhms 20 V 2.2 V 69 nC - 55 C + 175 C 167 W Enhancement OptiMOS Tube