IPP065N03L MOSFET

结果: 11
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
Infineon Technologies MOSFET HIGH POWER_NEW 365库存量
¥75.1111
¥52.8501
¥42.7592
¥37.968
¥33.6627
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 58 mOhms 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 406库存量
¥53.6863
¥28.4534
¥25.9674
¥21.8316
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 65 mOhms 20 V 3.5 V 51 nC - 55 C + 150 C 167 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 无库存交货期 18 周
¥34.0808
最低: 500
倍数: 500
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 65 mOhms 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 6,390库存量
¥18.4416
¥11.7407
¥7.8761
¥6.3732
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 30 V 70 A 3.5 mOhms 20 V 1 V 18 nC - 55 C + 175 C 79 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 261库存量
¥47.234
¥24.7357
¥22.4983
¥20.7581
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 111 mOhms 20 V 3 V 35 nC - 55 C + 150 C 101 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 456库存量
¥18.6111
¥9.6728
¥7.8083
¥7.1416
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 90 A 3.3 mOhms 20 V 2 V 98 nC - 55 C + 175 C 188 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 208库存量
¥33.7531
¥22.0802
¥16.046
¥13.4018
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 30 V 80 A 2.3 mOhms 16 V 1 V 140 nC - 55 C + 175 C 136 W Enhancement AEC-Q100 OptiMOS Tube
Infineon Technologies MOSFET N-Ch 60V 45A TO220-3 OptiMOS-T2 94库存量
¥19.5264
¥12.4074
¥8.3507
¥6.7687
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 45 A 7.9 mOhms 16 V 2.2 V 49 nC - 55 C + 175 C 71 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 187库存量
¥29.2783
¥25.7301
¥21.1762
¥21.0971
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 80 A 4.9 mOhms 20 V 2 V 69 nC - 55 C + 175 C 150 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 1库存量
¥22.4192
¥14.3962
¥9.8423
¥8.2716
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 80 A 4.2 mOhms 20 V 1.2 V 50 nC - 55 C + 175 C 115 W Enhancement OptiMOS Tube
Infineon Technologies IPP040N06NXKSA1
Infineon Technologies MOSFET IFX FET 60V
Mouser 目前在您所在地区不销售该产品。
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 69 A 4 mOhms 20 V 3.3 V 38 nC - 55 C + 175 C 36 W Enhancement Tube