IPP65R155CFD7 MOSFET

结果: 27
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
Infineon Technologies MOSFET HIGH POWER_NEW 209库存量
¥35.482
¥18.1139
¥16.4641
¥16.046
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 700 V 15 A 155 mOhms 20 V 4.5 V 28 nC - 55 C + 150 C 77 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 774库存量
¥55.5847
¥29.5269
¥26.9618
¥23.7413
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 700 V 25 A 90 mOhms 20 V 4.5 V 53 nC - 55 C + 150 C 127 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 365库存量
¥75.1111
¥52.8501
¥42.7592
¥37.968
¥33.6627
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 58 mOhms 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 300库存量
¥82.5465
¥56.4096
¥46.5673
¥41.6857
¥39.211
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 650 V 50 A 41 mOhms 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFET LOW POWER_NEW 712库存量
¥27.9562
¥13.9781
¥12.656
¥10.17
¥9.6728
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 237 mOhms 20 V 3.5 V 18 nC - 55 C + 150 C 52 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 41库存量
500预期 2026/12/10
¥67.0881
¥36.2278
¥33.2559
¥30.5213
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 4.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 718库存量
¥61.2121
¥32.8378
¥30.0241
¥27.0522
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 57 mOhms 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,012库存量
¥58.0707
¥30.9394
¥28.3743
¥25.2329
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 84 mOhms 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 632库存量
¥58.647
¥36.3973
¥33.0073
¥28.0353
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 90 mOhms 20 V 3.5 V 51 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS 263库存量
¥53.3473
¥34.9057
¥25.7301
¥22.826
¥20.2609
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 650 V 21 A 115 mOhms 20 V 4.5 V 41 nC - 40 C + 150 C 114 W Enhancement AEC-Q101 CoolMOS Tube
Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS 848库存量
¥35.821
¥18.2834
¥17.9444
¥14.9725
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 650 V 14 A 190 mOhms 20 V 4.5 V 28 nC - 40 C + 150 C 77 W Enhancement AEC-Q101 CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 69库存量
¥59.89
¥39.211
¥28.8715
¥24.4871
¥22.7469
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 84 mOhms 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW
500预期 2027/4/1
¥39.2901
¥20.3513
¥18.4416
¥15.0516
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16 A 145 mOhms 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_LEGACY 无库存交货期 27 周
¥15.9669
最低: 500
倍数: 500
Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 22.4 A 150 mOhms 20 V 4 V 86 nC - 55 C + 150 C 34.7 W Enhancement Tube
Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS 无库存交货期 19 周
¥39.2901
最低: 500
倍数: 500
Si Through Hole N-Channel 1 Channel 650 V 45 A 50 mOhms 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement AEC-Q101 CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 无库存交货期 18 周
¥34.0808
最低: 500
倍数: 500
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 65 mOhms 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 519库存量
¥49.1324
¥32.1711
¥23.9899
¥20.0123
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 110 mOhms 20 V 4.5 V 41 nC - 40 C + 150 C 114 W Enhancement Tube
Infineon Technologies MOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2 429库存量
¥62.1161
¥40.6913
¥30.0241
¥26.555
¥23.8204
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 31.2 A 110 mOhms 20 V 3 V 118 nC - 55 C + 150 C 277.8 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 22.4A TO220-3 482库存量
¥46.895
¥24.4871
¥22.3288
¥21.5039
¥18.9388
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22.4 A 135 mOhms 20 V 3.5 V 86 nC - 40 C + 150 C 195.3 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 159库存量
¥35.482
¥24.4871
¥18.3625
¥11.2548
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 190 mOhms 20 V 4.5 V 23 nC - 40 C + 150 C 63 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 12库存量
¥28.4534
¥17.6167
¥16.5432
¥16.1251
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13 A 168 mOhms 20 V 3 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET 337库存量
¥22.5774
¥14.5544
¥9.9214
¥8.3507
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 360 mOhms 20 V 4 V 14 nC - 55 C + 150 C 43 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 225库存量
¥29.6964
¥19.3569
¥13.56
¥11.3339
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13 A 168 mOhms 20 V 3 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 8.7A TO220-3 CoolMOS CFD2 146库存量
¥23.9899
¥15.3906
¥10.4186
¥8.8479
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8.7 A 420 mOhms 30 V 4 V 32 nC - 55 C + 150 C 83.3 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 224库存量
¥27.459
¥14.9725
¥13.4809
¥10.9158
¥10.509
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 210 mOhms 20 V 3.5 V 23 nC - 55 C + 150 C 64 W Enhancement Tube