RGW40TS65 绝缘栅双极晶体管(IGBT)

结果: 9
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 封装 / 箱体 安装风格 配置 集电极—发射极最大电压 VCEO 集电极—射极饱和电压 栅极/发射极最大电压 在25 C的连续集电极电流 Pd-功率耗散 最小工作温度 最大工作温度 封装
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) Discrete Semiconductors, IGBT, High-Speed Fast Switching Type, 650V 20A, TO-247N, Field Stop Trench IGBT 355库存量
¥47.5617
¥31.6852
¥19.5264
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 1.9 V - 30 V, 30 V 40 A 136 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) Transistor, IGBT, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT
450库存量
¥76.9304
¥51.2003
¥40.5331
¥39.1206
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 80 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 650V 40A TO-247N Field Stp Trnch IGBT 413库存量
¥62.1161
¥35.7306
¥29.945
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 1.5 V - 30 V, 30 V 78 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT
无库存交货期 22 周
¥34.8266
最低: 450
倍数: 450
Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 80 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 650V 40A TO-247N Field Stp Trnch IGBT 无库存交货期 24 周
Si TO-247N-3 Through Hole Single 650 V 1.5 V - 30 V, 30 V 78 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switch 650V 20A FRD Built-in TO-247N Field Stop Trench IGBT 600库存量
¥46.7368
¥26.3855
¥22.0011
¥21.0067
¥20.679
最低: 1
倍数: 1
Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 40 A 136 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 20A, TO-247N, Field Stop Trench IGBT 475库存量
¥40.115
¥26.6341
¥18.532
¥17.9444
最低: 1
倍数: 1
Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 40 A 136 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 40A, Automotive Hybrid IGBT with Built-In SiC-SBD
443库存量
¥127.0572
¥77.6649
¥71.5516
最低: 1
倍数: 1
SiC TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 81 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 40A, TO-247N, Field Stop Trench IGBT 600库存量
¥48.3866
¥32.4197
¥23.0746
¥22.0802
¥21.6734
最低: 1
倍数: 1
Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 78 A 214 W - 40 C + 175 C Tube