RGW60TS65 绝缘栅双极晶体管(IGBT)

结果: 9
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 封装 / 箱体 安装风格 配置 集电极—发射极最大电压 VCEO 集电极—射极饱和电压 栅极/发射极最大电压 在25 C的连续集电极电流 Pd-功率耗散 最小工作温度 最大工作温度 封装
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 650V 30A TO-247N Field Stp Trnch IGBT 542库存量
¥51.867
¥29.4478
¥24.4871
¥24.3967
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 1.5 V - 30 V, 30 V 60 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 650V 30A TO-247N Field Stp Trnch IGBT 408库存量
¥58.0707
¥33.2559
¥27.798
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 1.5 V - 30 V, 30 V 60 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT
无库存交货期 22 周
¥33.8322
最低: 450
倍数: 450
Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT
无库存交货期 22 周
¥32.092
最低: 450
倍数: 450
Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, TO-247N, Field Stop Trench IGBT
无库存交货期 24 周
¥27.1313
最低: 450
倍数: 450
Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) 650V 40A TO-247N Field Stp Trnch IGBT 无库存交货期 24 周
Si TO-247N-3 Through Hole Single 650 V 1.5 V - 30 V, 30 V 78 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switch 650V 30A FRD Built-in TO-247N Field Stop Trench IGBT 600库存量
¥53.9349
¥36.2278
¥25.5606
¥23.165
最低: 1
倍数: 1
Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 60 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, TO-247N, Field Stop Trench IGBT 600库存量
¥47.1436
¥31.4366
¥22.0011
¥19.2778
最低: 1
倍数: 1
Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 60 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, Automotive Hybrid IGBT with Built-In SiC-SBD
3库存量
¥123.4977
¥75.2693
¥68.9074
最低: 1
倍数: 1
SiC TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube