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|
绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT
- RGW60TS65EHRC11
- ROHM Semiconductor
-
450:
¥33.8322
-
无库存交货期 22 周
|
Mouser 零件编号
755-RGW60TS65EHRC11
|
ROHM Semiconductor
|
绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT
|
|
无库存交货期 22 周
|
|
最低: 450
倍数: 450
|
|
|
Si
|
TO-247N-3
|
Through Hole
|
Single
|
650 V
|
1.9 V
|
30 V
|
64 A
|
178 W
|
- 40 C
|
+ 175 C
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) Transistor, IGBT, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT
- RGW80TS65EHRC11
- ROHM Semiconductor
-
1:
¥78.4107
-
450库存量
|
Mouser 零件编号
755-RGW80TS65EHRC11
|
ROHM Semiconductor
|
绝缘栅双极晶体管(IGBT) Transistor, IGBT, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT
|
|
450库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247N-3
|
Through Hole
|
Single
|
650 V
|
1.9 V
|
30 V
|
80 A
|
214 W
|
- 40 C
|
+ 175 C
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, TO-247N, Field Stop Trench IGBT
- RGW60TS65HRC11
- ROHM Semiconductor
-
450:
¥27.1313
-
无库存交货期 24 周
|
Mouser 零件编号
755-RGW60TS65HRC11
|
ROHM Semiconductor
|
绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, TO-247N, Field Stop Trench IGBT
|
|
无库存交货期 24 周
|
|
最低: 450
倍数: 450
|
|
|
Si
|
TO-247N-3
|
Through Hole
|
Single
|
650 V
|
1.9 V
|
30 V
|
64 A
|
178 W
|
- 40 C
|
+ 175 C
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, TO-247N, Field Stop Trench IGBT
- RGW60TS65GC13
- ROHM Semiconductor
-
1:
¥47.1436
-
600库存量
-
寿命结束
|
Mouser 零件编号
755-RGW60TS65GC13
寿命结束
|
ROHM Semiconductor
|
绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, TO-247N, Field Stop Trench IGBT
|
|
600库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247GE-3
|
Through Hole
|
Single
|
650 V
|
1.9 V
|
30 V
|
60 A
|
178 W
|
- 40 C
|
+ 175 C
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, Automotive Hybrid IGBT with Built-In SiC-SBD
- RGW60TS65CHRC11
- ROHM Semiconductor
-
1:
¥123.4977
-
3库存量
-
寿命结束
|
Mouser 零件编号
755-RGW60TS65CHRC11
寿命结束
|
ROHM Semiconductor
|
绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 30A, Automotive Hybrid IGBT with Built-In SiC-SBD
|
|
3库存量
|
|
最低: 1
倍数: 1
|
|
|
SiC
|
TO-247N-3
|
Through Hole
|
Single
|
650 V
|
1.9 V
|
30 V
|
64 A
|
178 W
|
- 40 C
|
+ 175 C
|
Tube
|
|