RGWX5TS65 绝缘栅双极晶体管(IGBT)

结果: 7
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 封装 / 箱体 安装风格 配置 集电极—发射极最大电压 VCEO 集电极—射极饱和电压 栅极/发射极最大电压 在25 C的连续集电极电流 Pd-功率耗散 最小工作温度 最大工作温度 封装
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) Discrete Semiconductors, IGBT, High-Speed Fast Switching Type, 650V 75A, TO-247N, Field Stop Trench IGBT 859库存量
¥36.4764
¥34.3294
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 1.5 V - 30 V, 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) Discrete Semiconductors, IGBT, High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT 870库存量
¥82.9646
¥48.8838
¥41.4371
¥41.0303
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 1.5 V - 30 V, 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT
400库存量
¥66.8395
¥43.3468
¥30.7699
¥30.4422
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT
450库存量
¥97.1913
¥67.4949
¥57.9012
¥57.1554
¥54.4321
最低: 1
倍数: 1
Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) Transistor IGBT, 650V 75A, TO-247N
无库存交货期 24 周
¥40.6122
最低: 450
倍数: 450
Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switching Type, 650V 75A, TO-247N, Field Stop Trench IGBT 600库存量
¥67.6644
¥45.991
¥32.9169
¥31.2671
最低: 1
倍数: 1
Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Bulk
ROHM Semiconductor 绝缘栅双极晶体管(IGBT) High-Speed Fast Switch 650V 75A FRD Built-in TO-247N Field Stop Trench IGBT 590库存量
¥73.8681
¥50.5449
¥40.4427
¥40.2845
¥37.968
最低: 1
倍数: 1
Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Bulk