|
|
碳化硅MOSFET N-Ch 650V 30A Silicon Carbide SiC
- SCT3080ALGC11
- ROHM Semiconductor
-
1:
¥112.9096
-
179库存量
-
900预期 2027/4/14
|
Mouser 零件编号
755-SCT3080ALGC11
|
ROHM Semiconductor
|
碳化硅MOSFET N-Ch 650V 30A Silicon Carbide SiC
|
|
179库存量
900预期 2027/4/14
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247N-3
|
1 Channel
|
650 V
|
30 A
|
104 mOhms
|
- 4 V, + 22 V
|
5.6 V
|
48 nC
|
|
+ 175 C
|
134 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET 650V 30A 134W SIC 80mOhm TO-247N
- SCT3080ALHRC11
- ROHM Semiconductor
-
1:
¥170.8899
-
366库存量
|
Mouser 零件编号
755-SCT3080ALHRC11
|
ROHM Semiconductor
|
碳化硅MOSFET 650V 30A 134W SIC 80mOhm TO-247N
|
|
366库存量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247N-3
|
1 Channel
|
650 V
|
30 A
|
104 mOhms
|
- 4 V, + 22 V
|
5.6 V
|
48 nC
|
|
+ 175 C
|
134 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
- SCT3080KLGC11
- ROHM Semiconductor
-
1:
¥197.8517
-
1,034库存量
|
Mouser 零件编号
755-SCT3080KLGC11
|
ROHM Semiconductor
|
碳化硅MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
|
|
1,034库存量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
31 A
|
104 mOhms
|
- 4 V, + 22 V
|
5.6 V
|
60 nC
|
- 55 C
|
+ 175 C
|
165 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Transistor SiC MOSFET 650V 80mO 3rd Gen TO-263-7L
- SCT3080AW7TL
- ROHM Semiconductor
-
1:
¥138.3007
-
855库存量
|
Mouser 零件编号
755-SCT3080AW7TL
|
ROHM Semiconductor
|
碳化硅MOSFET Transistor SiC MOSFET 650V 80mO 3rd Gen TO-263-7L
|
|
855库存量
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
650 V
|
29 A
|
104 mOhms
|
- 4 V, + 22 V
|
5.6 V
|
48 nC
|
|
+ 175 C
|
125 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Transistor SiC MOSFET 650V 80mO 3rd Gen TO-247-4L
- SCT3080ARC15
- ROHM Semiconductor
-
1:
¥99.5869
-
840库存量
|
Mouser 零件编号
755-SCT3080ARC15
|
ROHM Semiconductor
|
碳化硅MOSFET Transistor SiC MOSFET 650V 80mO 3rd Gen TO-247-4L
|
|
840库存量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
30 A
|
104 mOhms
|
- 4 V, + 22 V
|
5.6 V
|
48 nC
|
|
+ 175 C
|
134 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
- SCT3080ARC14
- ROHM Semiconductor
-
1:
¥178.992
-
529库存量
-
NRND
|
Mouser 零件编号
755-SCT3080ARC14
NRND
|
ROHM Semiconductor
|
碳化硅MOSFET 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
|
|
529库存量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
30 A
|
80 mOhms
|
- 4 V, + 22 V
|
5.6 V
|
48 nC
|
- 55 C
|
+ 175 C
|
134 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET TO263 1.2KV 30A N-CH SIC
- SCT3080KW7TL
- ROHM Semiconductor
-
1:
¥177.4213
-
369库存量
|
Mouser 零件编号
755-SCT3080KW7TL
|
ROHM Semiconductor
|
碳化硅MOSFET TO263 1.2KV 30A N-CH SIC
|
|
369库存量
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
30 A
|
104 mOhms
|
- 4 V, + 22 V
|
5.6 V
|
60 nC
|
|
+ 175 C
|
159 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET TO247 1.2KV 31A N-CH SIC
- SCT3080KRC14
- ROHM Semiconductor
-
1:
¥157.3299
-
150库存量
-
NRND
|
Mouser 零件编号
755-SCT3080KRC14
NRND
|
ROHM Semiconductor
|
碳化硅MOSFET TO247 1.2KV 31A N-CH SIC
|
|
150库存量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
31 A
|
80 mOhms
|
- 4 V, + 22 V
|
5.6 V
|
60 nC
|
- 55 C
|
+ 175 C
|
165 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET 1200V 31A 165W SIC 80mOhm TO-247N
- SCT3080KLHRC11
- ROHM Semiconductor
-
1:
¥224.5762
-
171库存量
|
Mouser 零件编号
755-SCT3080KLHRC11
|
ROHM Semiconductor
|
碳化硅MOSFET 1200V 31A 165W SIC 80mOhm TO-247N
|
|
171库存量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
31 A
|
80 mOhms
|
- 4 V, + 22 V
|
2.7 V
|
60 nC
|
- 55 C
|
+ 175 C
|
165 W
|
Enhancement
|
AEC-Q101
|
|
