|
|
MOSFET 80V N-Ch PWR FET 9000pF 130nC 214A
- TK100E08N1,S1X
- Toshiba
-
1:
¥51.1212
-
127库存量
|
Mouser 零件编号
757-TK100E08N1S1X
|
Toshiba
|
MOSFET 80V N-Ch PWR FET 9000pF 130nC 214A
|
|
127库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
80 V
|
214 A
|
3.2 mOhms
|
20 V
|
2 V
|
130 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
U-MOSVIII-H
|
Tube
|
|
|
|
MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA
- TK100E06N1,S1X
- Toshiba
-
1:
¥34.9848
-
59库存量
|
Mouser 零件编号
757-TK100E06N1S1X
|
Toshiba
|
MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA
|
|
59库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
263 A
|
1.9 mOhms
|
20 V
|
2 V
|
140 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
U-MOSVIII-H
|
Tube
|
|
|
|
MOSFET MOSFET NCh 6.9ohm VGS10V10uAVDS80V
- TK46A08N1,S4X
- Toshiba
-
1:
¥16.4641
-
578库存量
|
Mouser 零件编号
757-TK46A08N1S4X
|
Toshiba
|
MOSFET MOSFET NCh 6.9ohm VGS10V10uAVDS80V
|
|
578库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
80 V
|
46 A
|
6.9 mOhms
|
20 V
|
4 V
|
37 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
U-MOSVIII-H
|
Tube
|
|
|
|
MOSFET 80V N-Ch PWR FET 157A 192W 81nC
- TK72E08N1,S1X
- Toshiba
-
1:
¥32.8378
-
129库存量
|
Mouser 零件编号
757-TK72E08N1S1X
|
Toshiba
|
MOSFET 80V N-Ch PWR FET 157A 192W 81nC
|
|
129库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
80 V
|
157 A
|
4.3 mOhms
|
20 V
|
|
81 nC
|
|
|
192 W
|
|
U-MOSVIII-H
|
Tube
|
|
|
|
MOSFET MOSFET NCh 10ohm VGS10V10uAVDS80V
- TK35A08N1,S4X
- Toshiba
-
1:
¥16.2946
-
569库存量
|
Mouser 零件编号
757-TK35A08N1S4X
|
Toshiba
|
MOSFET MOSFET NCh 10ohm VGS10V10uAVDS80V
|
|
569库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
80 V
|
35 A
|
10 mOhms
|
20 V
|
4 V
|
25 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
U-MOSVIII-H
|
Tube
|
|
|
|
MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V
- TK100A08N1,S4X
- Toshiba
-
1:
¥48.9629
-
无库存
|
Mouser 零件编号
757-TK100A08N1S4X
|
Toshiba
|
MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V
|
|
无库存
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
80 V
|
100 A
|
2.6 mOhms
|
20 V
|
4 V
|
130 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
U-MOSVIII-H
|
Tube
|
|