TK39N60X MOSFET

结果: 10
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装

Toshiba MOSFET DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) 14库存量
¥91.6543
¥54.2626
¥52.6919
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms 30 V 3.5 V 85 nC - 55 C + 150 C 270 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET 230W 1MHz TO-247 2库存量
剪切带
¥69.3933
¥36.3973
卷轴
¥36.3973
最低: 1
倍数: 1
: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 90 mOhms 30 V 4 V 47 nC - 55 C + 150 C 230 W Enhancement DTMOSVI Reel, Cut Tape

Toshiba MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF 53库存量
¥64.6812
¥43.2564
¥34.7362
¥30.849
¥27.7076
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms 30 V 3.7 V 86 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube

Toshiba MOSFET Power MOSFET N-Channel 4,086库存量
¥77.6649
¥56.6582
¥53.8445
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 62 mOhms 30 V 3 V 135 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube

Toshiba MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) 69库存量
¥55.9124
¥34.8266
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET DTMOSIV-High Speed 600V 40mOhmmax 60库存量
¥105.0448
¥87.1795
¥79.9814
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET TO-247-4L PD=230W 1MHz PWR MOSFET TRNS 46库存量
¥70.06
¥38.0471
¥34.9057
¥32.4197
最低: 1
倍数: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 30.8 A 88 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube

Toshiba MOSFET DTMOSIV 600V 40mOhm 61.8A 400W 6500pF 8库存量
¥119.2715
¥90.8181
¥75.597
¥67.4158
¥63.8563
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms 30 V 3.7 V 180 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube

Toshiba MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
120预期 2027/2/15
¥71.5516
¥50.3754
¥40.6913
¥36.2278
¥32.092
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms 30 V 3.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC 无库存交货期 16 周
¥103.0673
¥87.5185
¥80.6481
¥77.0095
¥70.1391
最低: 1
倍数: 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 38.8 A 65 mOhms 30 V 2.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube