UF3C120150K4S

Name: onsemi UF3C120150K4S
Brand: onsemi
SKU: 431-UF3C120150K4S
Price: 107.3 RMB
Availability: InStock

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Mouser编号：

431-UF3C120150K4S

制造商编号：

UF3C120150K4S

制造商：

onsemi

说明：

碳化硅MOSFET 1200V/150MOSICFETG3TO247-4

数据表:

UF3C120150K4S 数据表 (PDF)

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产品属性	属性值	选择属性
制造商:	onsemi
产品种类:	碳化硅MOSFET
RoHS:
安装风格:	Through Hole
封装 / 箱体:	TO-247-4
通道数量:	1 Channel
Vds-漏源极击穿电压:	1.2 kV
Id-连续漏极电流:	18.4 A
Rds On-漏源导通电阻:	330 mOhms
Vgs - 栅极-源极电压:	- 25 V, + 25 V
Vgs th-栅源极阈值电压:	3.5 V
Qg-栅极电荷:	25.7 nC
最小工作温度:	- 55 C
最大工作温度:	+ 175 C
Pd-功率耗散:	166.7 W
通道模式:	Enhancement
资格:	AEC-Q101
商标名:	SiC FET
商标:	onsemi
配置:	Single
下降时间:	8 ns
封装:	Tube
产品类型:	SiC MOSFETS
上升时间:	8 ns
系列:	UF3C
工厂包装数量:	600
子类别:	Transistors
晶体管极性:	N-Channel
典型关闭延迟时间:	26 ns
典型接通延迟时间:	21 ns
单位重量:	6 g

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合规代码

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

原产地分类

原产国:: 菲律宾
组装原产国/地区:: 菲律宾
扩散国家:: 美国

发货时，国家/地区可能会发生变化。

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D²PAK-3, D²PAK-7, D²PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.