Infineon Technologies RIC70115 Rad-Hard GaN HEMT Gate Drivers

Infineon Technologies RIC70115 Rad-Hard GaN HEMT Gate Drivers provide radiation hardness and long-term reliability for satellite and space applications. The Infineon RIC70115 supports silicon FETs and GaN HEMTs in low- and high-side configurations, easing the transition from silicon to GaN. These GaN HEMT gate drivers operate over a temperature range of -55°C to +125°C and are characterized for single-event effects (SEE) up to a linear energy transfer (LET) of 81.9MeV·cm²/mg and a total ionizing dose (TID) of up to 100krad(Si). The RIC70115 includes an independent Miller clamp that prevents parasitic-induced turn-on while maintaining switching speed. Truly differential input logic rejects common-mode noise and minimizes the effects of electromagnetic interference (EMI) and radio frequency interference (RFI).

Features

Truly differential input enhances immunity to noise on input and enables both high- and low-side operation
Integrated linear regulator provides regulated optimal gate drive voltage for GaN
HEMT and logic level (LL) Si FET while supporting wide bias voltage range
Integrated Miller clamp improves robustness against undesired induced turn-on

Short propagation delay enables high switching frequency
Target radiation tolerance - high dose rate (50-300rad(Si)/s) of 100krad(Si), characterized to 150krad(Si)
Target SEE hardness
- No SEB or SEL up to LET of 81.9MeV·cm²/mg
- SET characterized up to LET of 81.9MeV·cm²/mg
Planned to be electrically screened and qualified to MIL-PRF-38535, Class V