Infineon Technologies Ultrafast 600V Trench IGBTs

Infineon Ultrafast 600V Trench IGBTs are rugged, reliable Insulated Gate Bipolar Transistors optimized for Uninterruptible Power Supplies (UPS), solar, industrial motor, and welding applications. These Ultrafast 600V Trench IGBTs utilize Trench thin wafer technology to offer lower conduction and switching losses. Infineon Ultrafast 600V Trench IGBTs are co-packaged with a soft recovery low Qrr diode. These devices are ideal for ultra-fast switching (8KHz to 30KHz) applications with 5µs short circuit rating. They feature low Vce(on) and positive Vce(on) temperature coefficient for easy paralleling.


  • Low Vce (on) Trench IGBT Technology
  • Low Switching Losses
  • Maximum Junction Temperature 175 °C
  • 5μS short circuit SOA
  • Square RBSOA
  • 100% of The Parts Tested for ILM
  • Positive Vce (on) Temperature Coefficient
  • Tight Parameter Distribution
  • Lead Free Package
  • High Efficiency in a Wide Range of Applications
  • Suitable for a Wide Range of Switching Frequencies due to Low Vce (on) and Low Switching Losses
  • Rugged Transient Performance for Increased Reliability
  • Excellent Current Sharing in Parallel Operation


  • Uninterruptible Power Supplies (UPS)
  • Solar
  • Industrial Motor
  • Welding
发布日期: 2012-02-03 | 更新日期: 2022-03-11