Navitas Semiconductor NV614xC 700V GaNSlim™ Power ICs

Navitas Semiconductor NV614xC 700V GaNSlim™ Power ICs include a high-performance eMode GaN FET (330mΩ), an integrated gate drive, and extended features to create a faster, smaller, more efficient, and more robust integrated powertrain. Integrated lossless current sensing eliminates external current sensing resistors and increases system efficiency. Over-temperature protection increases system robustness, and auto standby and sleep modes increase light/tiny/no-load efficiency. The highest dV/dt immunity, high-speed integrated drive, and industry-standard low-profile, low-inductance DPAK package enable designers to use Navitas GaN technology with simple, quick, reliable solutions, achieving superior power density and efficiency.

Features

  • Integrated gate drive
  • 3.3V/5V/15V PWM logic input compatible
  • Programmable accurate GaN current sensing
  • Over-temperature protection
  • Wide VCC range (6.2V to 24V typical)
  • Low standby current (50uA typical)
  • Sleep mode current (10uA max)
  • Built-in turn-on dV/dt optimization
  • Built-in turn-off di/dt optimization
  • Reliable hard and soft switching
  • Zero reverse recovery charge
  • DPAK-4L package with grounded cooling pad
    • Grounded cooling pad
    • Minimized package inductance
    • Low thermal resistance
  • Sustainability
    • RoHS, Pb-free, REACH-compliant
    • Up to 40% energy savings vs Si solutions
    • System level 4kg CO2 carbon footprint reduction
  • Product reliability of 20 years with a limited product warranty

Applications

  • AC-DC chargers and adapters
  • Wireless power
  • LED lighting
  • Solar micro-inverters
  • TV power
  • Server power and telecom power

Videos

Block Diagram

Block Diagram - Navitas Semiconductor NV614xC 700V GaNSlim™ Power ICs
发布日期: 2024-11-22 | 更新日期: 2026-07-09