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onsemi 80V Single N-Channel Power MOSFETs

onsemi NVBLS0DxN08X 80V Single N-Channel Power MOSFETs offer low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses. These MOSFETs also feature a low QRR, soft-recovery body diode. Each of these onsemi NVBLS0DxN08X 80V Single N-Channel Power MOSFETs comes in an H-PSOF8L package, is AEC-Q101 qualified, and PPAP capable. Each device is Pb-free, Halogen-free, BFR-free, and RoHS-compliant. This makes these devices ideal for synchronous rectification (SR) in DC-DC and AC-DC converters, as a primary switch in isolated DC-DC converters, motor drives, and automotive 48V systems.

Features

  • Low QRR, soft recovery body diode
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • AEC-Q101 qualified and PPAP capable
  • These devices are Pb-free, Halogen-free, BFR-free, and are RoHS-compliant

Applications

  • Synchronous rectification (SR) in DC-DC and AC-DC
  • Primary switch in isolated DC-DC converters
  • Motor drives
  • Automotive 48V system

Specifications

  • Drain-to-source voltage (VDSS) 80V
  • Gate-to-source voltage (VGS) 20V
  • Continuous drain current (ID)
    • NVBLS0D5N08X: 620A (TC = 25°C), 438A (TC = 100°C)
    • NVBLS0D6N08X: 510A (TC = 25°C), 361A (TC = 100°C)
  • Power dissipation (TC = 25°C)
    • NVBLS0D5N08X: 416W
    • NVBLS0D6N08X: 357W
  • Pulsed drain current (IDM)(TC = 25°C, tp = 100s)
    • NVBLS0D5N08X: 2317A
    • NVBLS0D6N08X: 1850A
  • −55 to +175°C operating junction (TJ) and storage temperature range (Tstg)
  • 260°C lead temperature for soldering purposes (TL) (1/8″ from case for 10s)
  • 80V drain-to-source breakdown voltage (V(BR)DSS) (VGS = 0V, ID = 1mA, TJ = 25°C)
  • Drain-to-source on resistance (RDS(on)) (VGS = 10V, ID = 80A, TJ = 25°C)
    • NVBLS0D5N08X 0.48mΩ (typ.)/0.55mΩ (max.)
    • NVBLS0D6N08X 0.62mΩ (typ.)/0.69mΩ (max.)
  • Input capacitance (CISS) (VDS = 40V, VGS = 0V, f = 1MHz)
    • NVBLS0D5N08X: 15903pF (typ.)/23850pF (max.)
    • NVBLS0D6N08X: 12669pf (typ.)/19004pF (max.)
  • Output capacitance (COSS) (VDS = 40V, VGS = 0V, f = 1MHz)
    • NVBLS0D5N08X: 4572pF (typ.)/6860pF (max.)
    • NVBLS0D6N08X: 3679pF (typ.)/5519pF (max.)
  • Total gate charge (QG(TOT)) (VDD = 40V, ID = 80A, VGS = 10V)
    • NVBLS0D5N08X: 222nC (typ.)/320 (max.)
    • NVBLS0D6N08X: 177nC (typ.)/255 (max.)
  • Reverse recovery charge (QRR)
    • NVBLS0D5N08X: 504nC
    • NVBLS0D6N08X: 426nC

Additional Resources

Circuit Diagram

Schematic - onsemi 80V Single N-Channel Power MOSFETs
发布日期: 2026-08-19 | 更新日期: 2026-08-25