onsemi NXH270A120M3F5SHG 3-Level ANPC Inverter Module
onsemi NXH270A120M3F5SHG 3-Level ANPC Inverter Module is a power module in an F5BP package with an A-type neutral-point-clamped 3-level inverter topology. The module integrates 1200V SiC MOSFETs, 1200V Field-Stop 7 IGBTs, and fast-recovery diodes to support high-efficiency power-conversion designs. The module is designed to reduce conduction and switching losses while supporting higher power and improved reliability. The NXH270A120M3F5SHG also features a low-inductance layout, solder pins, and an integrated NTC thermistor for temperature monitoring in demanding inverter systems.
The onsemi NXH270A120M3F5SHG 3-Level ANPC Inverter Module is ideal for energy storage systems and solar inverters that require a compact, high-power 3-level ANPC architecture. The device includes Pb-free, halide-free, and RoHS-compliant construction and supports switching operation across a -40°C to +175°C operating temperature range.
Features
- A-type neutral-point-clamped 3-level inverter module
- Integrated 1200V SiC MOSFETs for efficient power switching
- Integrated 1200V Field Stop 7 IGBTs and fast recovery diodes
- Low-inductance layout for high-power inverter designs
- Solder-pin connections for module integration
- Integrated NTC thermistor for temperature monitoring
- Lower conduction and switching losses for improved efficiency
- Pb-free, halide-free, and RoHS-compliant device construction
Applications
- Energy storage system
- Solar inverters
Specifications
- Module package
- PIM-60 package
- Package size of 112.00mm x 62.00mm x 12.00mm
- Operating temperature under switching condition range of -40°C to +175°C
- Creepage and clearance distances
- Terminal-to-heatsink creepage distance of 17.4mm
- Terminal-to-terminal creepage distance of 7.0mm
- Terminal-to-heatsink clearance distance of 15.6mm
- Terminal-to-terminal clearance distance of 6.0mm
- SiC MOSFET ratings
- Drain-source voltage of 1200V
- Gate-source voltage range of +22V to -10V
- Recommended operating gate-source voltage range of +18V to -3V to -5V
- Continuous drain current of 463A at TC = 80°C and TVJ = 175°C
- Pulsed peak drain current of 1200A at TC = 80°C and TVJ = 175°C with 1ms pulse width
- Power dissipation of 826W at TVJ = 175°C and TC = 80°C
- Comparative tracking index of 600
- Storage temperature range of -40°C to +125°C
- Isolation test voltage of 4000VRMS for 60s at 50Hz
- Stray inductance of 10nH
- M5 screw terminal connection torque range of 3Nm to 5Nm
- Module weight of 260g
- IGBT ratings
- Collector-emitter voltage of 1200V
- Continuous collector current of 299A at TC = 80°C and TVJ = 175°C
- Pulsed peak collector current of 800A at TC = 80°C and TVJ = 175°C with 1ms pulse width
- Power dissipation of 742W at TVJ = 175°C and TC = 80°C
- Diode ratings
- Peak repetitive reverse voltage of 1200V
- Continuous forward current of 260A at TC = 80°C and TVJ = 175°C
- Repetitive peak forward current of 800A at TVJ = 175°C with 1ms pulse width
Schematic Diagram
PACKAGE DIMENSIONS
