Qorvo TGA2830 & TGA2975 GaN Power Amplifiers

Qorvo TGA2830 & TGA2975 GaN Power Amplifiers operate from 2.7GHz to 3.5GHz and are designed using Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25). The TGA2830 and TGA2975 can operate under both pulse and CW conditions and are ideally suited for commercial and defense related radar applications. Both RF ports on these devices have integrated DC blocking capacitors and are matched to 50Ω.

The Qorvo TGA2830 and TGA2975 GaN Power Amplifiers are available in a 5mm x 5mm overmold Quad Flat No-Lead (QFN) package.

Features

2.7GHz to 3.5GHz frequency range
Output power at saturation (PSAT) P_IN = 18dBm
- 2830: >42.5dBm
- 2975: >41.0dBm
Power Added Efficiency (PAE) P_IN = 18dBm
- 2830: >54%
- 2975: >54%
Small signal gain
- 2830: >30.5dB
- 2975: >31.0dB

Return loss
- 2830: >11.0dB
- 2975: >9.0dB
Bias
- 2830: VD = 20V to 32V, IDQ = 225mA
- 2975: VD = 28V, IDQ = 175mA
Pulsed VD: PW = 100us, DC = 10%
5.0mm x 5.0mm x 1.45mm QFN24 package