SanRex FMG50AQ120N6 SiC MOSFET

SanRex FMG50AQ120N6 SiC MOSFET supports high current density, embedded FWD, and low ON resistance. This device incorporates a SiC MOSFET chip with built-in reflux diode functionality, helping to reduce unnecessary inductance. The FMG50AQ120N6 SiC MOSFET achieves high-speed switching and low loss by adopting a 4-pin structure for high performance. Typical applications include industrial inverters, DC-DC converters, EV battery chargers, and resonant power supplies.

Features

Low power loss thanks to low R_DS(on) and low switching loss
Low temperature dependency of R_DS(on), reducing thermal runaway risks at high temperature operation
Safe gate driving at high frequency operation through optimized V_GS(th) (4.0V)

Top-level short circuit tolerance enabling the safe design of equipment
No additional FWD required
TO-247-4L package SiC MOSFET

Applications

Industrial inverters
DC-DC converters

EV battery chargers
Resonant power supplies

Specifications

1200V withstand voltage
50A to 150A drain/source current range
440W maximum power dissipation
28.0mΩ to 30.0mΩ on-state resistance range
42ns to 92ns switching range
290nC total gate charge
9.0nF typical input capacitance
2.5nF typical output capacitance
0.2nF typical reverse transfer capacitance

0.8Ω typical internal gate resistance
6nH typical internal stray inductance
2500V_AC RMS isolation voltage for 1 minute
0.8Nm maximum mounting torque
Thermal resistance
- 0.28°C maximum junction-to-case
- 1.7°C typical case-to-heatsink
-40°C to +150°C operating junction temperature range