Taiwan Semiconductor TQMxx0NB0xLDCRLG Dual 40V/60V MOSFETs
Taiwan Semiconductor TQMxx0NB0xLDCRLG Dual 40V/60V MOSFETs are automotive dual N-channel devices for 12V and 24V automotive systems. The family is offered in 40V and 60V options with low maximum RDS(on), low gate charge, and PDFN56U dual packaging for compact board-level switching designs. The MOSFETs feature AEC-Q101 qualification, 100% UIS and Rg testing, wettable-flank packages, and support for 175°C operating junction temperature.
The Taiwan Semiconductor TQMxx0NB0xLDCRLG series includes TQM100NB04LDCR, TQM140NB04LDCR, TQM250NB06LDCR, and TQM300NB06LDCR options with 10mΩ to 30mΩ maximum RDS(on) at VGS = 10V. These devices are excellent for solenoid and motor control, automotive transmission control, and DC-DC converter applications that require dual MOSFET integration, high-temperature operation, and automotive-grade reliability.
Features
- Automotive dual N-channel MOSFET family for 12V and 24V systems
- Low maximum RDS(on) options for efficient board-level switching
- 100% UIS and Rg tested for production robustness
- Wettable flank package for automated optical inspection support
- Low gate charge options for switching control efficiency
- RoHS-compliant and halogen-free construction
Applications
- 12V and 24V automotive systems
- Solenoid and motor control
- Automotive transmission control
- DC-DC converters
Specifications
- TQM100NB04LDCR RLG, 40V dual N-channel MOSFET
- Maximum RDS(on) of 10mΩ at VGS = 10V
- Maximum RDS(on) of 16mΩ at VGS = 4.5V
- Typical Qg of 12nC at VGS = 4.5V
- Continuous drain current of 33A at TC = 25°C
- Pulsed drain current of 132A
- Single-pulse avalanche energy of 38mJ
- TQM140NB04LDCR RLG, 40V dual N-channel MOSFET
- Maximum RDS(on) of 14mΩ at VGS = 10V
- Maximum RDS(on) of 22.4mΩ at VGS = 4.5V
- Typical Qg of 8.9nC at VGS = 4.5V
- Continuous drain current of 33A at TC = 25°C
- Pulsed drain current of 132A
- Single-pulse avalanche energy of 30mJ
- TQM250NB06LDCR RLG, 60V dual N-channel MOSFET
- Maximum RDS(on) of 25mΩ at VGS = 10V
- Maximum RDS(on) of 35mΩ at VGS = 4.5V
- Typical Qg of 11nC at VGS = 4.5V
- Continuous drain current of 27A at TC = 25°C
- Pulsed drain current of 108A
- Single-pulse avalanche energy of 29mJ
- TQM300NB06LDCR RLG, 60V dual N-channel MOSFET
- Maximum RDS(on) of 30mΩ at VGS = 10V
- Maximum RDS(on) of 42mΩ at VGS = 4.5V
- Typical Qg of 8.6nC at VGS = 4.5V
- Continuous drain current of 21A at TC = 25°C
- Pulsed drain current of 84A
- Single-pulse avalanche energy of 18mJ
- Common specifications
- Gate-source voltage of ±20V
- Operating junction and storage temperature range of -55°C to +175°C
- PDFN56U dual package
- MSL 1 per J-STD-020
- AEC-Q101 qualified
Additional Resources
Typical Application
